Silisyum Karbür (SiC) devices provide superior thermal properties as compared to their counter-part Silicon devices. In applications where the operating temperature exceeds the limitations of Silicon devices, GeneSiC’s portfolio of bare chips and high temperature devices are an ideal solution for continous duty operation in high voltage motor control.
SiC Schottky MPS ™
| Parça Numarası | Voltaj (V) | İleri akım (Bir) | Paket |
|---|---|---|---|
| GC50MPS06-CAL | 650 | 50 | Çıplak Çip |
| GC15MPS12-CAL | 1200 | 15 | Çıplak Çip |
| GC20MPS12-CAL | 1200 | 20 | Çıplak Çip |
| GC50MPS12-CAL | 1200 | 50 | Çıplak Çip |
| GC25MPS17-CAL | 1700 | 25 | Çıplak Çip |
| GAP3SHT33-CAU | 3300 | 0.3 | Çıplak Çip |
SiC MOSFET
| Parça Numarası | Voltaj (V) | Direniş Üzerine (mΩ) | Paket |
|---|---|---|---|
| G3R20MT12-CAL | 1200 | 20 | Çıplak Çip |
| G3R30MT12-CAL | 1200 | 30 | Çıplak Çip |
| G3R40MT12-CAL | 1200 | 40 | Çıplak Çip |
| G3R75MT12-CAL | 1200 | 75 | Çıplak Çip |
| G3R20MT17-CAL | 1700 | 20 | Çıplak Çip |
| G3R45MT17-CAL | 1700 | 45 | Çıplak Çip |
| G3R50MT33-CAL | 3300 | 50 | Çıplak Çip |
| G3R100MT33-CAL | 3300 | 100 | Çıplak Çip |
