Co-packaged SiC Transistor-Diode combination in a robust, isolated, 4-Leaded, mini-module packaging reduces Turn-On energy losses and enables flexible circuit designs…
SiC switches offering lowest conduction losses and superior short circuit capability released for High Frequency Power Circuits Dulles, Virginia., Oct…
GeneSiC's SiC Transistor and Rectifiers offer significant advantages towards achieving the goals of the Little Box Challenge State-Of-the Art. Silicon…
The promise of high temperature in SiC Transistors realized through compatible industry-standard packages will critically enhance downhole and aerospace actuators…
High Voltage assemblies to benefit from these low capacitance rectifiers offering temperature-independent zero reverse recovery currents in isolated packages Thief…
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GeneSiC Interviewed at PCIM 2016 in Nuremberg, Germany
All-Silicon Carbide Junction Transistors-Diodes offered in a 4 Leaded mini-module
General Purpose High Temperature SiC Transistors and Rectifiers Offered at Low Cost
Gate Driver Board and SPICE Models for Silicon Carbide Junction Transistors (SJT) Released
GeneSiC Releases 25 mOhm/1700 V Silicon Carbide Transistors
GeneSiC Supports Google/IEEE’s Little Box Challenge
High Temperature (210 C) SiC Junction Transistors offered in hermetic packages
SiC Schottky Diodes in SMB (DO-214) packages offer smallest footprints
Silicon Carbide Schottky Rectifiers extended to 3300 Volt ratings
Silicon Carbide Bare Die up to 8000 V Ratings from GeneSiC
GeneSiC's success cited in a congressional testimony by Advanced Manufacturing Office, Office of Energy Efficiency and Renewable Energy, U.S. DoE
Read the entire testimony here
GeneSiC Named among the top 30 power semiconductor companies
EEWeb covers GeneSiC's GA05JT12 on Arrow
electronica 2018 (Hall B6 Booth 323)
Munich, Germany
APEC 2019 (Booth 1364)
Anaheim, CA
PCIM 2019 (Hall 7 Booth 246)
Nuremberg, Germany