Characterization Boards:
Reference Design Boards:
Application Notes:
Technical Articles:
May 14, 2015 - Compound Semi Online GeneSiC Begins Offering SiC Junction Transistor-Diodes
Apr 22, 2015 - TTI Market Eye GaN and SiC Power Device Presentations at APEC
Mar 1, 2015 - IEEE PELS Magazine Fulfilling the Promise of High Temperature Operation with Silicon Carbide Devices
Nov 25, 2014 - Electronicspecifier Design support offered for industry’s lowest loss switches
Nov 14, 2014 - How2Power 1200-V And 1700-V SiC Junction Transistors Are Positioned To Challenge SiC MOSFETs And Silicon IGBTs
Oct 28, 2014 - Compound Semiconductor SiC switches offer low conduction losses and superior short circuit capability
Oct 28, 2014 - Semiconductor Today GeneSiC launches improved, lower on-resistance 1700V and 1200V SiC junction transistors
Sep 5, 2013 - Power Electronics Europe News GeneSiC's SJTs mentioned as offering lower overall losses than other SiC switches
July 29, 2013 - Driving SiC Switches - from Compound Semiconductor Magazine (Pg 41) SJTs offer IGBT-driver compatible operation
June 19, 2013 - Bodo's Power System Publishes Editorial article from GeneSiC (Pg 16) Driving and Using Emerging SiC Switches
March, 2012 - Compound Semiconductor Magazine (Pg 33) SiC Electronics: Exploiting High Temperature Promises
February, 2012 - Bodo's Power Systems (Pg 44) Silicon Carbide Thyristors usher in the Smart Grid Revolution
February, 2012 - Power Electronics Technology SiC: A Rugged Power Semiconductor Compound To Be Reckoned With
November, 2011 - Power Electronics Technology (Pg 21) SiC “Super” Junction Transistors Offer Breakthrough High Temp Performance
October, 2011 - Bodo's Power Systems (Pg 36) Breakthrough High Temperature Electrical Performance of SiC “Super” Junction Transistors
July, 2011 - Power Electronics Technology (Pg 36) 1200 V/100 A Si IGBT/SiC Diode Copack Cuts Switching Losses
May, 2011 - Bodo's Power Systems (Pg 46) 1200 V/100 A Si IGBT/SiC Diode Copack for Power Electronic Applications
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Technical Support
Evaluation Boards
Characterization Boards:
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Reference Design Boards:
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MOSFETs
Application Notes:
Technical Articles:
Commercial Impact of Silicon Carbide
A 10-kV Large-Area 4H-SiC Power DMOSFET With Stable Subthreshold Behavior Independent of Temperature
Reliability and performance limitations in SiC power devices
Novel SiC MOS-Bipolar Switches for >10 kV Applications
Reliability of SiC MOS devices
Emerging Silicon-Carbide Power Devices Enable Revolutionary Changes in High Voltage Power Conversion
Schottky MPS
Application Notes:
AN1003 SPICE Model Usage Instructions
AN1002 Understanding the Datasheet of a SiC Power Schottky Diode
AN1001 SiC Power Diode Reliability
AN-2 1200 V SiC JBS diodes with ultra-low capacitive reverse recovery charge for fast switching applications
AN-1 1200 V Schottky diodes with temperature invariant barrier heights and ideality factors
Technical Articles:
15 kV SiC PiN diodes achieve 95% of avalanche limit and stable long-term operation
1200 V SiC Schottky Rectifiers optimized for ≥ 250 °C operation with lowest-in-class junction capacitance
12.9 kV SiC PiN Diodes with Low On-State Drops and High Carrier Lifetimes
Hybrid Si-IGBT/SiC Rectifier co-packs and SiC JBS Rectifiers
Correlation between carrier recombination lifetime and forward voltage drop in 4H-SiC PiN diodes
Development of Radiation Detectors Based on Semi-Insulating Silicon Carbide
Fast Neutron Detection With Silicon Carbide Semi-insulating Detectors
High power SiC PiN rectifiers
High Power SiC PiN Rectifiers
SJT
Application Notes:
Low Power Gate Driver Board
High Power Gate Driver Board
Double Pulse Switching Board
AN-10B Driving SiC Junction Transistors (SJT): Two-Level Gate Drive Concept
AN-10A Driving SiC Junction Transistors (SJT) with Off-the-Shelf Silicon IGBT Gate Drivers: Single-Level Drive Concept
Technical Articles:
Static and Switching Characteristics of 1200 V SiC Junction Transistors with On-chip Integrated Schottky Rectifiers
Silicon Carbide Junction Transistors and Schottky Rectifiers optimized for 250°C operation
Rapidly Maturing SiC Junction Transistors Featuring Current Gain (β) > 130, Blocking Voltages Up To 2700 V and Stable Long-Term Operation
10 kV SiC BJTs – static, switching and reliability characteristics
Characterization of the Stability of Current Gain and Avalanche-Mode Operation of 4H-SiC BJTs
SiC “Super” Junction Transistors with Ultra-Fast (< 15 ns) Switching Capability
Stability of Electrical Characteristics of SiC “Super” Junction Transistors under Long-Term DC and Pulsed Operation at various Temperatures
Silicon Carbide "Super" Junction Transistors Operating at 500°C
Exploiting the high temperature promise of SiC
1200 V SiC “Super” Junction Transistors operating at 250 °C with extremely low energy losses for power conversion applications
1200 V-class 4H-SiC "Super" Junction Transistors with Current Gains of 88 and Ultra-fast Switching capability
Thyristors
Application Notes:
Technical Articles:
Static and Switching Characteristics of 6500 V Silicon Carbide Anode Switched Thyristor Modules
Integrated SiC Anode Switched Thyristor Modules for Smart-Grid Applications
High Temperature Ultra High Voltage SiC Thyristors
Large Area >8 kV SiC GTO Thyristors with innovative Anode-Gate designs
Trade Journals
May 14, 2015 - Compound Semi Online
GeneSiC Begins Offering SiC Junction Transistor-Diodes
Apr 22, 2015 - TTI Market Eye
GaN and SiC Power Device Presentations at APEC
Mar 1, 2015 - IEEE PELS Magazine
Fulfilling the Promise of High Temperature Operation with Silicon Carbide Devices
Nov 25, 2014 - Electronicspecifier
Design support offered for industry’s lowest loss switches
Nov 14, 2014 - How2Power
1200-V And 1700-V SiC Junction Transistors Are Positioned To Challenge SiC MOSFETs And Silicon IGBTs
Oct 28, 2014 - Compound Semiconductor
SiC switches offer low conduction losses and superior short circuit capability
Oct 28, 2014 - Semiconductor Today
GeneSiC launches improved, lower on-resistance 1700V and 1200V SiC junction transistors
Sep 5, 2013 - Power Electronics Europe News
GeneSiC's SJTs mentioned as offering lower overall losses than other SiC switches
July 29, 2013 - Driving SiC Switches - from Compound Semiconductor Magazine (Pg 41)
SJTs offer IGBT-driver compatible operation
June 19, 2013 - Bodo's Power System Publishes Editorial article from GeneSiC (Pg 16)
Driving and Using Emerging SiC Switches
March, 2012 - Compound Semiconductor Magazine (Pg 33)
SiC Electronics: Exploiting High Temperature Promises
February, 2012 - Bodo's Power Systems (Pg 44)
Silicon Carbide Thyristors usher in the Smart Grid Revolution
February, 2012 - Power Electronics Technology
SiC: A Rugged Power Semiconductor Compound To Be Reckoned With
November, 2011 - Power Electronics Technology (Pg 21)
SiC “Super” Junction Transistors Offer Breakthrough High Temp Performance
October, 2011 - Bodo's Power Systems (Pg 36)
Breakthrough High Temperature Electrical Performance of SiC “Super” Junction Transistors
July, 2011 - Power Electronics Technology (Pg 36)
1200 V/100 A Si IGBT/SiC Diode Copack Cuts Switching Losses
May, 2011 - Bodo's Power Systems (Pg 46)
1200 V/100 A Si IGBT/SiC Diode Copack for Power Electronic Applications