High Voltage circuits and assemblies to benefit from SiC chips that offer unprecedented voltage ratings and ultra-high speed switching
Dulles, Virginia., Nov 7, 2013 — GeneSiC Semiconductor, en pioner og global leverandør av et bredt utvalg av silisiumkarbid (SiC) power semiconductors announce the immediate availability of 8000 V SiC PiN Rectifiers; 8000 V SiC Schottky Rectifiers, 3300 V SiC Schottky Rectifiers and 6500 V SiC Thyristors in bare die format. These unique products represents the highest voltage SiC devices on the market, and is specifically targeted towards oil and gas instrumentation, voltage multiplier circuits and high voltage assemblies.
Contemporary ultra-high voltage circuits suffer from low circuit efficiencies and large sizes because the reverse recovery currents from Silicon rectifiers discharge the parallel connected capacitors. Ved høyere likeretterkrysstemperaturer, this situation worsens further since the reverse recovery current in Silicon rectifiers increases with temperature. Med termiske begrensninger høyspenningsenheter, overgangstemperaturer stiger ganske lett selv når beskjedne strømmer passeres. High Voltage SiC rectifiers offer unique characteristics that promises to revolutionize the high voltage assemblies. GeneSiC 8000 V og 3300 V Schottky rectifiers feature zero reverse recovery current that does not change with temperature. This relatively high voltage in a single device allows a reduction in voltage multiplication stages required in typical high voltage generator circuits, through use of higher AC input voltages. The near-ideal switching characteristics allow the elimination/dramatic reduction of voltage balancing networks and snubber circuits. 8000 V PiN Rectifiers offer higher current levels and higher operating temperatures. 6500 V SiC Thyristor chips are also available to accelerate R&D of new systems.
“These products showcase GeneSiC’s strong lead in the development of SiC chips in the multi-kV ratings. We believe the 8000 V rating goes beyond what Silicon devices can offer at rated temperatures, and will allow significant benefits to our customers. GeneSiC’s low VF, low capacitance SiC Rectifiers and Thyristors will enable system level benefits not possible before” sa Dr.. Ranbir Singh, President for GeneSiC Semiconductor.
8000 V/2 A SiC Bare Die PiN Rectifier Technical Highlights
- Tjmax = 210DeC
- Reverse Leakage Currents < 50 uA at 175DeC
- Reverse Recovery Charge 558 nC (typical).
8000 V/50 mA SiC Bare Die Schottky Rectifier Technical Highlights
- Total Capacitance 25 pF (typical, at -1 V, 25DeC).
- Positive temperature coefficient on VF
- Tjmax = 175DeC
6500 V SiC Thyristor Bare Die Technical Highlights
- Tre tilbud – 80 Amperes (GA080TH65-CAU); 60 Amperes (GA060TH65-CAU); og 40 Amperes (GA040TH65-CAU)
- Tjmax = 200DeC
3300 V/0.3 A SiC Bare Die Rectifier Technical Highlights
- On-state Drop of 1.7 V at 0.3 EN
- Positive temperature coefficient on VF
- Tjmax = 175DeC
- Capacitive charge 52 nC (typical).
Om GeneSiC Semiconductor Inc.
GeneSiC Semiconductor Inc.. er en ledende innovatør innen høytemperatur, høyeffekt og ultrahøyspent silisiumkarbid (SiC) enheter, og global leverandør av et bredt spekter av krafthalvledere. Dens portefølje av enheter inkluderer SiC-basert likeretter, transistor, og tyristorprodukter, samt silisium likeretterprodukter. GeneSiC har utviklet omfattende åndsverk og teknisk kunnskap som omfatter de siste fremskrittene innen SiC-kraftenheter, med produkter rettet mot alternativ energi, bilindustrien, ned ole oljeboring, Motor kontroll, strømforsyning, transport, og avbruddsfri strømforsyning. GeneSiC har oppnådd en rekke forsknings- og utviklingskontrakter fra amerikanske myndigheter, inkludert ARPA-E, Energidepartementet, marinen, Hæren, DARPA, DTRA, og Department of Homeland Security, samt store statlige hovedentreprenører. I 2011, selskapet vant den prestisjetunge R&D100-pris for kommersialisering av ultrahøyspent SiC-tyristorer.
For mer informasjon, besøk gjerne https://192.168.88.14/index.php/hit-sic/baredie
