Ny fysikk lar tyristor nå høyere nivå
DULLES, VA, august 30, 2011 – New Physics Lets Thyristors Reach Higher Level An electric power grid supplies reliable power with the help of electronic devices that ensure smooth, reliable…
GeneSiC vinner prestisjetunge R&D100 Award for SiC-enheter i netttilkoblede sol- og vindenergiapplikasjoner
DULLES, VA, juli 14, 2011 — R&D Magazine har valgt GeneSiC Semiconductor Inc. av Dulles, VA som mottaker av det prestisjetunge 2011 R&D 100 Award for the commercialization of…
GeneSiC Semiconductor Selected to Showcase Technology at 2011 ARPA-E Energy Innovation Summit
DULLES, VA, februar 28, 2011 – GeneSiC Semiconductor is excited to announce its selection for the prestigious Technology Showcase at the ARPA-E Energy Innovation Summit, co-hosted by the Department of…
GeneSiC wins power management project from NASA in support of future Venus exploration missions
DULLES, VA, desember 14, 2010 – GeneSiC Semiconductor Inc., a key innovator of novel Silicon Carbide (SiC) devices for high temperature, high power, and ultra-high voltage applications, announces selection of…
Multi-kHz, Ultra-høyspent silisiumkarbidtyristorer ble testet til amerikanske forskere
DULLES, VA, november 1, 2010 –I et første tilbud i sitt slag, GeneSiC Semiconductor announces the availability of a family of 6.5kV SCR-mode Silicon Carbide Thyristors for use in power…