GeneSiC’s New 3rd Generation SiC MOSFETs Featuring the Industry’s Best Figure-of-Merits
DULLES, VA, February 12, 2020 — GeneSiC Semiconductor’s next-generation 1200V G3R™SiC MOSFETs with RDS(ON) levels ranging from 20 mΩ to 350 mΩ deliver unprecedented levels of performance, robustness and quality…
GeneSiC’s 3300V and 1700V 1000mΩ SiC MOSFETs Revolutionize the Miniaturization of Auxiliary Power Supplies
DULLES, VA, December 4, 2020 — GeneSiC announces availability of industry-leading 3300V and 1700V discrete SiC MOSFETs that are optimized to achieve unparalleled miniaturization, reliability and energy savings in industrial…
GeneSiC’s Industry Leading 6.5kV SiC MOSFETs – the Vanguard for a New Wave of Applications
DULLES, VA, October 20, 2020 — GeneSiC’s releases 6.5kV silicon carbide MOSFETs to lead the forefront in delivering unprecedented levels of performance, efficiency and reliability in medium-voltage power conversion applications…
GeneSiC wins the prestigious R&D100 Award for SiC-Based Monolithic Transistor-Rectifier Switch
DULLES, VA, December 5, 2019 — R&D Magazine has selected GeneSiC Semiconductor Inc. of Dulles, VA as a recipient of the prestigious 2019 R&D 100 Award for development of SiC-Based…
Bodo’s Power Systems (Pg 46)
May, 2011 – 1200 V/100 A Si IGBT/SiC Diode Copack for Power Electronic Applications
