G3R™ 750V SiC MOSFETs Offer Unparalleled Performance and Reliability
DULLES, VA, June 04, 2021 — GeneSiC’s next-generation 750V G3R™SiC MOSFETs will deliver unprecedented levels of performance, robustness and quality that exceeds its counterparts. System benefits include low on-state drops…
5th Generation 650V SiC Schottky MPS™ Diodes for Best-in-Class Efficiency
DULLES, VA, May 28, 2021 — GeneSiC Semiconductor, a pioneer and global supplier of Silicon Carbide (SiC) power semiconductor devices, announces the availability of 5th generation (GE*** series) SiC Schottky…
GeneSiC’s New 3rd Generation SiC MOSFETs Featuring the Industry’s Best Figure-of-Merits
DULLES, VA, February 12, 2020 — GeneSiC Semiconductor’s next-generation 1200V G3R™SiC MOSFETs with RDS(ON) levels ranging from 20 mΩ to 350 mΩ deliver unprecedented levels of performance, robustness and quality…
GeneSiC’s 3300V and 1700V 1000mΩ SiC MOSFETs Revolutionize the Miniaturization of Auxiliary Power Supplies
DULLES, VA, December 4, 2020 — GeneSiC announces availability of industry-leading 3300V and 1700V discrete SiC MOSFETs that are optimized to achieve unparalleled miniaturization, reliability and energy savings in industrial…
GeneSiC’s Industry Leading 6.5kV SiC MOSFETs – the Vanguard for a New Wave of Applications
DULLES, VA, October 20, 2020 — GeneSiC’s releases 6.5kV silicon carbide MOSFETs to lead the forefront in delivering unprecedented levels of performance, efficiency and reliability in medium-voltage power conversion applications…
