GeneSiC’s 3300V and 1700V 1000mΩ SiC MOSFETs Revolutionize the Miniaturization of Auxiliary Power Supplies
DULLES, VA, December 4, 2020 — GeneSiC announces availability of industry-leading 3300V and 1700V discrete SiC MOSFETs that are optimized to achieve unparalleled miniaturization, reliability and energy savings in industrial…
GeneSiC’s Industry Leading 6.5kV SiC MOSFETs – the Vanguard for a New Wave of Applications
DULLES, VA, October 20, 2020 — GeneSiC’s releases 6.5kV silicon carbide MOSFETs to lead the forefront in delivering unprecedented levels of performance, efficiency and reliability in medium-voltage power conversion applications…
GeneSiC wins the prestigious R&D100 Award for SiC-Based Monolithic Transistor-Rectifier Switch
DULLES, VA, December 5, 2019 — R&D Magazine has selected GeneSiC Semiconductor Inc. of Dulles, VA as a recipient of the prestigious 2019 R&D 100 Award for development of SiC-Based…
Bodo’s Power Systems (Pg 46)
May, 2011 – 1200 V/100 A Si IGBT/SiC Diode Copack for Power Electronic Applications
Power Electronics Technology (Pg 36)
July, 2011 – 1200 V/100 A Si IGBT/SiC Diode Copack Cuts Switching Losses
