Carburo di silicio (SiC) devices provide superior thermal properties as compared to their counter-part Silicon devices. In applications where the operating temperature exceeds the limitations of Silicon devices, GeneSiC’s portfolio of bare chips and high temperature devices are an ideal solution for continous duty operation in high voltage motor control.
SiC Schottky MPS ™
| Numero di parte | Voltaggio (V) | Corrente diretta (UN) | Pacchetto |
|---|---|---|---|
| GC50MPS06-CAL | 650 | 50 | Chip nudo |
| GC15MPS12-CAL | 1200 | 15 | Chip nudo |
| GC20MPS12-CAL | 1200 | 20 | Chip nudo |
| GC50MPS12-CAL | 1200 | 50 | Chip nudo |
| GC25MPS17-CAL | 1700 | 25 | Chip nudo |
| GAP3SHT33-CAU | 3300 | 0.3 | Chip nudo |
MOSFET SiC
| Numero di parte | Voltaggio (V) | Sulla resistenza (mΩ) | Pacchetto |
|---|---|---|---|
| G3R20MT12-CAL | 1200 | 20 | Chip nudo |
| G3R30MT12-CAL | 1200 | 30 | Chip nudo |
| G3R40MT12-CAL | 1200 | 40 | Chip nudo |
| G3R75MT12-CAL | 1200 | 75 | Chip nudo |
| G3R20MT17-CAL | 1700 | 20 | Chip nudo |
| G3R45MT17-CAL | 1700 | 45 | Chip nudo |
| G3R50MT33-CAL | 3300 | 50 | Chip nudo |
| G3R100MT33-CAL | 3300 | 100 | Chip nudo |
