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מאמרים טכניים:
Hybrid Si-IGBT/SiC Rectifier co-packs and SiC JBS Rectifiers
ספטמבר, 2011 Hybrid Si-IGBT/SiC Rectifier co-packs and SiC JBS Rectifiers
12.9 kV SiC PiN Diodes with Low On-State Drops and High Carrier Lifetimes
ספטמבר, 2011 12.9 kV SiC PiN Diodes with Low On-State Drops and High Carrier Lifetimes
1200 V SiC Schottky Rectifiers optimized for ≥ 250 °C operation with lowest-in-class junction capacitance
יולי, 2012 1200 V SiC Schottky Rectifiers optimized for ≥ 250 °C operation with lowest-in-class junction capacitance
15 kV SiC PiN diodes achieve 95% of avalanche limit and stable long-term operation
Mar, 2013 15 kV SiC PiN diodes achieve 95% of avalanche limit and stable long-term operation
