GeneSiC thrives to deliver the best customer driven designs possible by providing SiC power devices with superior cost-performance index, high ruggedness and high quality.
Applications include:
- Mapalakas diode sa Power Factor Pagwawasto (PFC)
- Lumipat mode power Supply (SMPS)
- Electric Sasakyan – Power Train, DC-DC Converter and On-Board Charging
- Extreme Fast Charging Infrastructure
- Solar Inverters at Enerhiya Imbakan
- Traksyon
- Data Center Power Supplies
- Panimula heating at hinang
- High Voltage DC-DC Converters
- Free-wheeling / Anti-parallel Diode
- Humantong sa Pag-iilan at Pagtatago ng Ilaw
- Medikal Imaging Systems
- Down-Hole Oil Drilling Power Converters
- Mataas na Boltahe Sensing
- pulsed kapangyarihan
Visit www.genesicsemi.com/applications to learn more!
For high voltage sensing applications like DE-SAT protection and high side switch gate drive bootstrap circuits, the DO-214 and TO-252-2 packages are ideal solutions.
Part Number Voltage, VRRM
(V) Forward Current, IF
(A) Package
GB01SLT06-214 650 1 DO-214
GB01SLT12-214 1200 1 DO-214
GB01SLT12-252 1200 1 TO-252-2
GB02SLT12-214 1200 2 DO-214
GB02SLT12-252 1200 2 TO-252-2
GAP3SLT33-214 3300 0.3 DO-214
The TO-247-3 package offers great flexibility for higher power density and BOM reduction in applications like the power factor correction (PFC) inter that share a common cathode between two diodes.
Part Number Voltage, VRRM
(V) Forward Current, IF
(A) Package
GC2X5MPS12-247 1200 5 / 10 TO-247-3
GC2X8MPS12-247 1200 8 / 16 TO-247-3
GC2X10MPS12-247 1200 10 / 20 TO-247-3
GC2X15MPS12-247 1200 15 / 30 TO-247-3
GC2X20MPS12-247 1200 20 / 40 TO-247-3
Mga Tala sa Aplikasyon:
AN-1 1200 V Schottky diodes with temperature invariant barrier heights and ideality factors
Oktubre 2010 AN-1 1200 V Schottky diodes with temperature invariant barrier heights and ideality factors
AN-2 1200 V SiC JBS diodes with ultra-low capacitive reverse recovery charge for fast switching applications
Oktubre 2010 AN-2 1200 V SiC JBS diodes with ultra-low capacitive reverse recovery charge for fast switching applications
AN1001 SiC Power Diode Reliability
Setyembre, 2018AN1001 SiC Power Diode Reliability
AN1002 Pag-unawa sa Datasheet ng isang SiC Power Schottky Diode
Setyembre, 2018AN1002 Pag-unawa sa Datasheet ng isang SiC Power Schottky Diode
AN1003 SPICE Model Usage Instructions
Disyembre, 2018AN1003 SPICE Model Usage Instructions
Teknikal na Artikulo:
High Power SiC PiN Rectifiers
Disyembre, 2005 High Power SiC PiN Rectifiers
High power SiC PiN rectifiers
Jun, 2007 High power SiC PiN rectifiers
Fast Neutron Detection With Silicon Carbide Semi-insulating Detectors
Jun, 2008 Fast Neutron Detection With Silicon Carbide Semi-insulating Detectors
Development of Radiation Detectors Based on Semi-Insulating Silicon Carbide
Oktubre, 2008 Development of Radiation Detectors Based on Semi-Insulating Silicon Carbide
Correlation between carrier recombination lifetime and forward voltage drop in 4H-SiC PiN diodes
Set, 2010 Correlation between carrier recombination lifetime and forward voltage drop in 4H-SiC PiN diodes