Applications

Aerospace & Defense Alternative Energy Automotive Down Hole Oil Drilling Medical Imaging Industrial Smart Grid Transportation

Aerospace & Defense

GeneSiC Semiconductor's technology and capabilities have a proven track record of innovation, quality, and reliability in aerospace and defense over the past decade where security and ruggeddness are vital. We continue to support the ever increasing power electronic content in the modern aircrafts and ships.

  • Pulsed Power
  • Power Conversion and Distribution Systems
  • Integrated Power Solutions

 

Schottky MPS Diodes:

Part NumberRepetitive Reverse Voltage, VRRM
(V)
Forward Current, IF
(A)
Package
GB01SLT06-2146501DO-214
GC50MPS06-24712001TO-252-2
GB01SLT12-21412001DO-214
GB01SLT12-25212002TO-252-2
GB02SLT12-21412002DO-214
GC02MPS12-22012005TO-252-2
GB02SLT12-252120010TO-252-2
GC05MPS12-220120020TO-247-2
GB05SLT12-252120050TO-247-2
GC05MPS12-25233000.3DO-214
GC08MPS12-22033000.3TO-220-FP
GC08MPS12-25212002TO-220-2
GC10MPS12-220120010TO-247-3
GC2X5MPS12-24712005TO-220-2
GB10SLT12-25212005TO-252-2
GC10MPS12-252120015TO-247-3
GC15MPS12-22012008TO-220-2
GC15MPS12-24712008TO-252-2
GC2X8MPS12-247120020TO-247-3
GB20SLT12-247120010TO-220-2
GC20MPS12-247120010TO-252-2
GC2X10MPS12-247120030TO-247-3
GC2X15MPS12-247120015TO-247-2
GC2X20MPS12-247120015TO-220-2
GB50SLT12-247120040TO-247-3
GC50MPS12-247120020TO-247-2
GB2X50MPS12-2271200100SOT-227
GB2X100MPS12-227120050TO-247-2
GB05MPS17-2471200200SOT-227
GB10MPS17-24717005TO-247-2
GB25MPS17-247170010TO-247-2
GB50MPS17-247170025TO-247-2
GAP3SLT33-214170050TO-247-2
GAP3SLT33-220FP65050TO-247-2
SiC MOSFETs:

Part NumberDrain-Source Breakdown Voltage, VDSS
(V)
Drain-Source Resistance, RDS(on)
(mΩ)
Package
GR20MT12K120020TO-247-4
GR40MT12D120040TO-247-3
GR40MT12J120040TO-263-7
GR40MT12K120040TO-247-4
GR80MT12D120080TO-247-3
GR80MT12J120080TO-263-7
GR80MT12K120080TO-247-4
GR160MT12D1200160TO-247-3
GR160MT12J1200160TO-263-7
GR160MT12K1200160TO-247-4
GR280MT12D1200280TO-247-3
GR280MT12J1200280TO-263-7
GR280MT12K1200280TO-247-4
GR20MT17K170020TO-247-4
GR45MT17K170045TO-247-4
GR1000MT17D17001000TO-247-3
GR1000MT17J17001000TO-263-7
GR40MT33Y330040TO-268
GR350MT33J3300350TO-263-7

Alternative Energy

GeneSiC believes in energy efficiency through innovation. With the increasing penetration of renewable energy like wind and solar in to our power transmission and distribution system, the need for efficient and high power density power electronic converter systems are under demand.
We offer a wide portfolio in Silicon Carbide (SiC) Merged-PiN-Schottky Diodes and Silicon Carbide (SiC) MOSFETs with excellent characteristics and superior thermal performance that would help make smart grids more reliable.

  • Solar Micro-Inverter
  • Solar String Inverter
  • Solar Central Inverter
  • Rotor Side Converters (RSC) and Grid Side Converters (GSC) for Wind Energy Systems
  • High Voltage Sensing and Protection Equipment
  • Auxiliary Power Supply

 

Schottky MPS Diodes:

Part NumberRepetitive Reverse Voltage, VRRM
(V)
Forward Current, IF
(A)
Package
GB01SLT06-2146501DO-214
GC50MPS06-24712001TO-252-2
GB01SLT12-21412001DO-214
GB01SLT12-25212002TO-252-2
GB02SLT12-21412002DO-214
GC02MPS12-22012005TO-252-2
GB02SLT12-252120010TO-252-2
GC05MPS12-220120020TO-247-2
GB05SLT12-252120050TO-247-2
GC05MPS12-25233000.3DO-214
GC08MPS12-22033000.3TO-220-FP
GC08MPS12-25212002TO-220-2
GC10MPS12-220120010TO-247-3
GC2X5MPS12-24712005TO-220-2
GB10SLT12-25212005TO-252-2
GC10MPS12-252120015TO-247-3
GC15MPS12-22012008TO-220-2
GC15MPS12-24712008TO-252-2
GC2X8MPS12-247120020TO-247-3
GB20SLT12-247120010TO-220-2
GC20MPS12-247120010TO-252-2
GC2X10MPS12-247120030TO-247-3
GC2X15MPS12-247120015TO-247-2
GC2X20MPS12-247120015TO-220-2
GB50SLT12-247120040TO-247-3
GC50MPS12-247120020TO-247-2
GB2X50MPS12-2271200100SOT-227
GB2X100MPS12-227120050TO-247-2
GB05MPS17-2471200200SOT-227
GB10MPS17-24717005TO-247-2
GB25MPS17-247170010TO-247-2
GB50MPS17-247170025TO-247-2
GAP3SLT33-214170050TO-247-2
GAP3SLT33-220FP65050TO-247-2
SiC MOSFETs:

Part NumberDrain-Source Breakdown Voltage, VDSS
(V)
Drain-Source Resistance, RDS(on)
(mΩ)
Package
GR20MT12K120020TO-247-4
GR40MT12D120040TO-247-3
GR40MT12J120040TO-263-7
GR40MT12K120040TO-247-4
GR80MT12D120080TO-247-3
GR80MT12J120080TO-263-7
GR80MT12K120080TO-247-4
GR160MT12D1200160TO-247-3
GR160MT12J1200160TO-263-7
GR160MT12K1200160TO-247-4
GR280MT12D1200280TO-247-3
GR280MT12J1200280TO-263-7
GR280MT12K1200280TO-247-4
GR20MT17K170020TO-247-4
GR45MT17K170045TO-247-4
GR1000MT17D17001000TO-247-3
GR1000MT17J17001000TO-263-7
GR40MT33Y330040TO-268
GR350MT33J3300350TO-263-7

Automotive

GeneSiC's automotive AEC Q-101 qualified products are ideal for electric vehicles (EVs) and hybrid electric vehicles (HEVs) in applications like:

  • On-Board Battery Charger
  • DC Fast Charger
  • Traction Inverter
  • High Voltage Sensing and Protection
  • Auxiliary Power Supply

 

Schottky MPS Diodes:

Part NumberRepetitive Reverse Voltage, VRRM
(V)
Forward Current, IF
(A)
Package
GB01SLT06-2146501DO-214
GC50MPS06-24765050TO-247-2
GB01SLT12-21412001DO-214
GB01SLT12-25212001TO-252-2
GB02SLT12-21412002DO-214
GC02MPS12-22012002TO-220-2
GB02SLT12-25212002TO-252-2
GC05MPS12-220120015TO-220-2
GB05SLT12-252120015TO-247-2
GC05MPS12-252120020TO-247-2
GC08MPS12-220120020TO-247-2
GC08MPS12-252120030TO-247-3
GC10MPS12-220120040TO-247-3
GC2X5MPS12-247120050TO-247-2
GB10SLT12-252120050TO-247-2
GC10MPS12-2521200100SOT-227
GC15MPS12-2201200200SOT-227
SiC MOSFETs:

Part NumberDrain-Source Breakdown Voltage, VDSS
(V)
Drain-Source Resistance, RDS(on)
(mΩ)
Package
GR20MT12K120020TO-247-4
GR40MT12D120040TO-247-3
GR40MT12J120040TO-263-7
GR40MT12K120040TO-247-4
GR80MT12D120080TO-247-3
GR80MT12J120080TO-263-7
GR80MT12K120080TO-247-4
GR160MT12D1200160TO-247-3
GR160MT12J1200160TO-263-7
GR160MT12K1200160TO-247-4
GR280MT12D1200280TO-247-3
GR280MT12J1200280TO-263-7
GR280MT12K1200280TO-247-4

Down Hole Oil Drilling

Silicon Carbide (SiC) devices provide superior thermal properties as compared to their counter-part Silicon devices. In applications where the operating temperature exceeds the limitations of Silicon devices, GeneSiC's portfolio of bare chips and high temperature devices are an ideal solution for continous duty operation in high voltage motor control.

 

Schottky MPS Diodes:

Part NumberRepetitive Reverse Voltage, VRRM
(V)
Forward Current, IF
(A)
Package
GC01MPS06-CAG6501Bare Chip
GC01MPS06-CAL6501Bare Chip
GC50MPS06-CAG65050Bare Chip
GC50MPS06-CAL65050Bare Chip
GC01MPS12-CAG12001Bare Chip
GC01MPS12-CAL12001Bare Chip
GC02MPS12-CAG12002Bare Chip
GC02MPS12-CAL12002Bare Chip
GC05MPS12-CAL12005Bare Chip
GC08MPS12-CAL12008Bare Chip
GC10MPS12-CAL120010Bare Chip
GC20MPS12-CAL120020Bare Chip
GC50MPS12-CAG120050Bare Chip
GC50MPS12-CAL120050Bare Chip
GC05MPS17-CAG17005Bare Chip
GC05MPS17-CAL17005Bare Chip
GC25MPS17-CAG170025Bare Chip
GC25MPS17-CAL170025Bare Chip
GAP3SHT33-CAU33000.3Bare Chip
SiC MOSFETs:

Part NumberDrain-Source Breakdown Voltage, VDSS
(V)
Drain-Source Resistance, RDS(on)
(mΩ)
Package
GR20MT12-CAL120020Bare Chip
GR40MT12-CAL120040Bare Chip
GR80MT12-CAL120080Bare Chip
GR160MT12-CAL1200160Bare Chip
GR280MT12-CAL1200280Bare Chip
GR20MT17-CAL170020Bare Chip
GR45MT17-CAL170045Bare Chip
GR1000MT17-CAL17001000Bare Chip
GR40MT33-CAL330040Bare Chip
GR350MT33-CAL3300350Bare Chip

Medical Imaging

GeneSiC's offers highly reliable and key technologies as a part of its portfolio to deliver cost effective and smarter solutions for medical imaging applications like Magnetic Resonance Imaging (MRI) power sub-systems and gradient amplifiers.

Explore our solutions for MRI equipment:

  • Merged-PiN-Schottky (MPS) Diodes
  • MOSFETs
  • Junction Transistors
  • PiN Diodes
  • Custom Design Services

 

Schottky MPS Diodes:

Part NumberRepetitive Reverse Voltage, VRRM
(V)
Forward Current, IF
(A)
Package
GB01SLT06-2146501DO-214
GC50MPS06-24712001TO-252-2
GB01SLT12-21412001DO-214
GB01SLT12-25212002TO-252-2
GB02SLT12-21412002DO-214
GC02MPS12-22012005TO-252-2
GB02SLT12-252120010TO-252-2
GC05MPS12-220120020TO-247-2
GB05SLT12-252120050TO-247-2
GC05MPS12-25233000.3DO-214
GC08MPS12-22033000.3TO-220-FP
GC08MPS12-25212002TO-220-2
GC10MPS12-220120010TO-247-3
GC2X5MPS12-24712005TO-220-2
GB10SLT12-25212005TO-252-2
GC10MPS12-252120015TO-247-3
GC15MPS12-22012008TO-220-2
GC15MPS12-24712008TO-252-2
GC2X8MPS12-247120020TO-247-3
GB20SLT12-247120010TO-220-2
GC20MPS12-247120010TO-252-2
GC2X10MPS12-247120030TO-247-3
GC2X15MPS12-247120015TO-247-2
GC2X20MPS12-247120015TO-220-2
GB50SLT12-247120040TO-247-3
GC50MPS12-247120020TO-247-2
GB2X50MPS12-2271200100SOT-227
GB2X100MPS12-227120050TO-247-2
GB05MPS17-2471200200SOT-227
GB10MPS17-24717005TO-247-2
GB25MPS17-247170010TO-247-2
GB50MPS17-247170025TO-247-2
GAP3SLT33-214170050TO-247-2
GAP3SLT33-220FP65050TO-247-2
SiC MOSFETs:

Part NumberDrain-Source Breakdown Voltage, VDSS
(V)
Drain-Source Resistance, RDS(on)
(mΩ)
Package
GR20MT12K120020TO-247-4
GR40MT12D120040TO-247-3
GR40MT12J120040TO-263-7
GR40MT12K120040TO-247-4
GR80MT12D120080TO-247-3
GR80MT12J120080TO-263-7
GR80MT12K120080TO-247-4
GR160MT12D1200160TO-247-3
GR160MT12J1200160TO-263-7
GR160MT12K1200160TO-247-4
GR280MT12D1200280TO-247-3
GR280MT12J1200280TO-263-7
GR280MT12K1200280TO-247-4
GR20MT17K170020TO-247-4
GR45MT17K170045TO-247-4
GR1000MT17D17001000TO-247-3
GR1000MT17J17001000TO-263-7
GR40MT33Y330040TO-268
GR350MT33J3300350TO-263-7

Industrial

GeneSiC offers the best-in-class portfolio of Silicon Carbide (SiC) devices to suit the trends in industrial applications. We offer power discrete semiconductor devices in different surface-mount and through-hole packages over a wide range of breakdown voltages and output currents.

Learn more about the superior features and technical specifications of our Merged-PiN-Schottky (MPS) Diodes and MOSFETs.

  • Motor Control
  • Switched Mode Power Supply (SMPS)
  • Uniterruptible Power Supply (UPS)
  • Smart Energy and Smart Metering
  • Induction Heating
  • Welding
  • LED and HID Lighting
  • High Voltage Sensing and Protection
  • Auxiliary Power Supply

 

Schottky MPS Diodes:

Part NumberRepetitive Reverse Voltage, VRRM
(V)
Forward Current, IF
(A)
Package
GB01SLT06-2146501DO-214
GC50MPS06-24712001TO-252-2
GB01SLT12-21412001DO-214
GB01SLT12-25212002TO-252-2
GB02SLT12-21412002DO-214
GC02MPS12-22012005TO-252-2
GB02SLT12-252120010TO-252-2
GC05MPS12-220120020TO-247-2
GB05SLT12-252120050TO-247-2
GC05MPS12-25233000.3DO-214
GC08MPS12-22033000.3TO-220-FP
GC08MPS12-25212002TO-220-2
GC10MPS12-220120010TO-247-3
GC2X5MPS12-24712005TO-220-2
GB10SLT12-25212005TO-252-2
GC10MPS12-252120015TO-247-3
GC15MPS12-22012008TO-220-2
GC15MPS12-24712008TO-252-2
GC2X8MPS12-247120020TO-247-3
GB20SLT12-247120010TO-220-2
GC20MPS12-247120010TO-252-2
GC2X10MPS12-247120030TO-247-3
GC2X15MPS12-247120015TO-247-2
GC2X20MPS12-247120015TO-220-2
GB50SLT12-247120040TO-247-3
GC50MPS12-247120020TO-247-2
GB2X50MPS12-2271200100SOT-227
GB2X100MPS12-227120050TO-247-2
GB05MPS17-2471200200SOT-227
GB10MPS17-24717005TO-247-2
GB25MPS17-247170010TO-247-2
GB50MPS17-247170025TO-247-2
GAP3SLT33-214170050TO-247-2
GAP3SLT33-220FP65050TO-247-2
SiC MOSFETs:

Part NumberDrain-Source Breakdown Voltage, VDSS
(V)
Drain-Source Resistance, RDS(on)
(mΩ)
Package
GR20MT12K120020TO-247-4
GR40MT12D120040TO-247-3
GR40MT12J120040TO-263-7
GR40MT12K120040TO-247-4
GR80MT12D120080TO-247-3
GR80MT12J120080TO-263-7
GR80MT12K120080TO-247-4
GR160MT12D1200160TO-247-3
GR160MT12J1200160TO-263-7
GR160MT12K1200160TO-247-4
GR280MT12D1200280TO-247-3
GR280MT12J1200280TO-263-7
GR280MT12K1200280TO-247-4
GR20MT17K170020TO-247-4
GR45MT17K170045TO-247-4
GR1000MT17D17001000TO-247-3
GR1000MT17J17001000TO-263-7
GR40MT33Y330040TO-268
GR350MT33J3300350TO-263-7

Smart Grid

The electrical power transmission and distribution system is moving towards the era of smart grids with increasing efforts on High Voltage DC Transmission (HVDC). GeneSiC is committed in provided inductry leading power discrete semiconductors that would help make smart grids more reliable and efficient.

  • Solid State Transformers (SST)
  • Solid State Circuit Breakers
  • Flexible AC Transmission Systems (FACTS)
  • Smart Energy Meters
  • Vehicle-to-Grid (V2G) Systems
  • Renewable Energy Systems
  • High Voltage Sensing and Protection Equipment
  • Auxiliary Power Supply

 

Schottky MPS Diodes:

Part NumberRepetitive Reverse Voltage, VRRM
(V)
Forward Current, IF
(A)
Package
GB01SLT06-2146501DO-214
GC50MPS06-24712001TO-252-2
GB01SLT12-21412001DO-214
GB01SLT12-25212002TO-252-2
GB02SLT12-21412002DO-214
GC02MPS12-22012005TO-252-2
GB02SLT12-252120010TO-252-2
GC05MPS12-220120020TO-247-2
GB05SLT12-252120050TO-247-2
GC05MPS12-25233000.3DO-214
GC08MPS12-22033000.3TO-220-FP
GC08MPS12-25212002TO-220-2
GC10MPS12-220120010TO-247-3
GC2X5MPS12-24712005TO-220-2
GB10SLT12-25212005TO-252-2
GC10MPS12-252120015TO-247-3
GC15MPS12-22012008TO-220-2
GC15MPS12-24712008TO-252-2
GC2X8MPS12-247120020TO-247-3
GB20SLT12-247120010TO-220-2
GC20MPS12-247120010TO-252-2
GC2X10MPS12-247120030TO-247-3
GC2X15MPS12-247120015TO-247-2
GC2X20MPS12-247120015TO-220-2
GB50SLT12-247120040TO-247-3
GC50MPS12-247120020TO-247-2
GB2X50MPS12-2271200100SOT-227
GB2X100MPS12-227120050TO-247-2
GB05MPS17-2471200200SOT-227
GB10MPS17-24717005TO-247-2
GB25MPS17-247170010TO-247-2
GB50MPS17-247170025TO-247-2
GAP3SLT33-214170050TO-247-2
GAP3SLT33-220FP65050TO-247-2
SiC MOSFETs:

Part NumberDrain-Source Breakdown Voltage, VDSS
(V)
Drain-Source Resistance, RDS(on)
(mΩ)
Package
GR20MT12K120020TO-247-4
GR40MT12D120040TO-247-3
GR40MT12J120040TO-263-7
GR40MT12K120040TO-247-4
GR80MT12D120080TO-247-3
GR80MT12J120080TO-263-7
GR80MT12K120080TO-247-4
GR160MT12D1200160TO-247-3
GR160MT12J1200160TO-263-7
GR160MT12K1200160TO-247-4
GR280MT12D1200280TO-247-3
GR280MT12J1200280TO-263-7
GR280MT12K1200280TO-247-4
GR20MT17K170020TO-247-4
GR45MT17K170045TO-247-4
GR1000MT17D17001000TO-247-3
GR1000MT17J17001000TO-263-7
GR40MT33Y330040TO-268
GR350MT33J3300350TO-263-7

Transportation

The global transportation industry is in its most transformative periods ever and GeneSiC is comitted in providing cost-effective and rugged products for service in harsh climatic conditions. Our diverse portfolio of Silicon Carbide (SiC) power discrete semiconductor devices offers low conduction and switching losses combined with excellent thermal capabilities to achieve more economic and efficient transportation systems.

  • Electric Buses
  • Rail & Metro Traction
  • Power Subsystems in Fleet & Cargo

 

Schottky MPS Diodes:

Part NumberRepetitive Reverse Voltage, VRRM
(V)
Forward Current, IF
(A)
Package
GB01SLT06-2146501DO-214
GC50MPS06-24712001TO-252-2
GB01SLT12-21412001DO-214
GB01SLT12-25212002TO-252-2
GB02SLT12-21412002DO-214
GC02MPS12-22012005TO-252-2
GB02SLT12-252120010TO-252-2
GC05MPS12-220120020TO-247-2
GB05SLT12-252120050TO-247-2
GC05MPS12-25233000.3DO-214
GC08MPS12-22033000.3TO-220-FP
GC08MPS12-25212002TO-220-2
GC10MPS12-220120010TO-247-3
GC2X5MPS12-24712005TO-220-2
GB10SLT12-25212005TO-252-2
GC10MPS12-252120015TO-247-3
GC15MPS12-22012008TO-220-2
GC15MPS12-24712008TO-252-2
GC2X8MPS12-247120020TO-247-3
GB20SLT12-247120010TO-220-2
GC20MPS12-247120010TO-252-2
GC2X10MPS12-247120030TO-247-3
GC2X15MPS12-247120015TO-247-2
GC2X20MPS12-247120015TO-220-2
GB50SLT12-247120040TO-247-3
GC50MPS12-247120020TO-247-2
GB2X50MPS12-2271200100SOT-227
GB2X100MPS12-227120050TO-247-2
GB05MPS17-2471200200SOT-227
GB10MPS17-24717005TO-247-2
GB25MPS17-247170010TO-247-2
GB50MPS17-247170025TO-247-2
GAP3SLT33-214170050TO-247-2
GAP3SLT33-220FP65050TO-247-2
SiC MOSFETs:

Part NumberDrain-Source Breakdown Voltage, VDSS
(V)
Drain-Source Resistance, RDS(on)
(mΩ)
Package
GR20MT12K120020TO-247-4
GR40MT12D120040TO-247-3
GR40MT12J120040TO-263-7
GR40MT12K120040TO-247-4
GR80MT12D120080TO-247-3
GR80MT12J120080TO-263-7
GR80MT12K120080TO-247-4
GR160MT12D1200160TO-247-3
GR160MT12J1200160TO-263-7
GR160MT12K1200160TO-247-4
GR280MT12D1200280TO-247-3
GR280MT12J1200280TO-263-7
GR280MT12K1200280TO-247-4
GR20MT17K170020TO-247-4
GR45MT17K170045TO-247-4
GR1000MT17D17001000TO-247-3
GR1000MT17J17001000TO-263-7
GR40MT33Y330040TO-268
GR350MT33J3300350TO-263-7