GeneSiC releases industry’s best performing 1700V SiC Schottky MPS™ diodes

DULLES, VA, January 7, 2019 — GeneSiC releases a comprehensive portfolio of its third generation 1700V SiC Schottky MPS™ diodes in TO-247-2 package

GeneSiC has introduced GB05MPS17-247, GB10MPS17-247, GB25MPS17-247 and GB50MPS17-247; the industry’s best performing 1700V SiC diodes available in the popular TO-247-2 through-hole package. These 1700V SiC diodes replace silicon-based ultra-fast recovery diodes and other old generation 1700V SiC JBS, enabling engineers to build switching circuits with greater efficiency and higher power density. Applications are expected to include electric vehicle fast chargers, motor drives, transportation power supplies and renewable energy.

GB50MPS17-247 is a 1700V 50A SiC merged-PiN-schottky diode, the industry’s highest current rated discrete SiC power diode. These newly released diodes feature low forward voltage drop, zero forward recovery, zero reverse recovery, low junction capacitance and are rated for a maximum operating temperature of 175°C. GeneSiC’s third generation SiC schottky diode technology provides industry leading avalanche ruggedness and surge current (Ifsm) robustness, combined with high quality automotive qualified 6-inch foundry and advanced high reliability discrete assembly technology.

These SiC diodes are pin-compatible direct replacements to other diodes available in the TO-247-2 package. Benefitting from their lower power losses (cooler operation) and high frequency switching capability, designers can now achieve greater conversion efficiency and greater power density in designs.

About GeneSiC Semiconductor, Inc.

GeneSiC is a fast emerging innovator in the area of SiC power devices and has a strong commitment to the development of Silicon Carbide (SiC) based devices for: (a) HV-HF SiC devices for Power Grid, Pulsed power and Directed Energy Weapons; and (b) High temperature SiC power devices for aircraft actuators and oil exploration. GeneSiC Semiconductor Inc. develops Silicon Carbide (SiC) based semiconductor devices for high temperature, radiation, and power grid applications. This includes development of rectifiers, FETs, bipolar devices as well as particle & photonic detectors. GeneSiC has access to an extensive suite of semiconductor design, fabrication, characterization and testing facilities for such devices. GeneSiC capitalizes on its core competency in device and process design to develop the best possible SiC devices for its customers. The company distinguishes itself by providing high quality products that are specifically tuned to each customer’s requirements. GeneSiC has prime/sub-contracts from major US Government agencies including ARPA-E, US Dept of Energy, Navy, DARPA, Dept of Homeland Security, Dept of Commerce and other departments within the US Dept. of Defense. GeneSiC continues to rapidly enhance the equipment and personnel infrastructure at its Dulles, Virginia facility. The company is aggressively hiring personnel experienced in compound semiconductor device fabrication, semiconductor testing and detector designs. Additional information about the company and its products may be obtained by calling GeneSiC at 703-996-8200 or by visiting www.genesicsemi.com.

Multi-kHz, Ultra-High Voltage Silicon Carbide Thyristors sampled to US Researchers

DULLES, VA, November 1, 2010 –In a first of its kind offering, GeneSiC Semiconductor announces the availability of a family of 6.5kV SCR-mode Silicon Carbide Thyristors for use in power electronics for Smart Grid applications. Revolutionary performance advantages of these power devices are expected to spur key innovations in utility-scale power electronics hardware to increase the accessibility and exploitation of Distributed Energy Resources (DER). “Until now, multi-kV Silicon Carbide (SiC) power devices were not openly available to US researchers to fully exploit the well-known advantages– namely 2-10kHz operating frequencies at 5-15kV ratings – of SiC-based power devices.” commented Dr. Ranbir Singh, President of GeneSiC. “GeneSiC has recently completed delivery of many 6.5kV/40A, 6.5kV/60A and 6.5kV/80A Thyristors to multiple customers conducting research in renewable energy, Army and Naval power system applications. SiC devices with these ratings are now being offered more widely.”

Silicon Carbide based Thyristors offer 10X higher voltage, 100X faster switching frequencies and higher temperature operation as compared to conventional Silicon-based Thyristors. Targeted applications research opportunities for these devices include general purpose medium voltage power conversion (MVDC), Grid-tied solar inverters, wind power inverters, pulsed power, weapon systems, ignition control, and trigger control. It is now well established that ultra-high voltage (>10kV) Silicon Carbide (SiC) device technology will play a revolutionary role in the next-generation utility grid. Thyristor-based SiC devices offer the highest on-state performance for >5 kV devices, and are widely applicable towards medium voltage power conversion circuits like Fault-Current Limiters, AC-DC converters, Static VAR compensators and Series Compensators. SiC based Thyristors also offer the best chance of early adoption due to their similarities to conventional power grid elements. Deploying these advanced power semiconductor technologies could provide as much as a 25-30 percent reduction in electricity consumption through increased efficiencies in delivery of electrical power.

Dr. Singh continues “It is anticipated that large-scale markets in solid-state electrical substations and wind turbine generators will open up after researchers in the power conversion arena will fully realize the benefits of SiC Thyristors. These first generation SiC Thyristors utilize the lowest demonstrated on-state voltage drop and differential on-resistances ever achieved in SiC Thyristors. We intend to release future generations of SiC Thyristors optimized for Gate-controlled Turn Off capability and >10kV ratings. As we continue to develop high temperature ultra-high voltage packaging solutions, the present 6.5kV Thyristors are packaged in modules with fully soldered contacts, limited to 150oC junction temperatures.” GeneSiC is a fast emerging innovator in the area of SiC power devices and has a strong commitment to the development of Silicon Carbide (SiC) based devices for: (a) HV-HF SiC devices for Power Grid, Pulsed power and Directed Energy Weapons; and (b) High temperature SiC power devices for aircraft actuators and oil exploration.

Located near Washington, DC in Dulles, Virginia, GeneSiC Semiconductor Inc. is a leading innovator in high-temperature, high-power and ultra high-voltage silicon carbide (SiC) devices. Current development projects include high-temperature rectifiers, SuperJunction Transistors (SJT) and a wide variety of Thyristor based devices. GeneSiC has or has had prime/sub-contracts from major US Government agencies, including the Department of Energy, Navy, Army, DARPA, and the Department of Homeland Security. The company is currently experiencing substantial growth, and hiring qualified personnel in power-device and detector design, fabrication, and testing. To find out more, please visit www.genesicsemi.com.

GeneSiC wins $2.53M from ARPA-E towards development of Silicon Carbide Thyristor-based devices

DULLES, VA, September 28, 2010 – Advanced Research Projects Agency – Energy (ARPA-E) has entered into a Cooperative Agreement with the GeneSiC Semiconductor-led team towards the development of the novel ultra high-voltage silicon carbide (SiC) Thyristor based devices. These devices are expected to be key enablers for integrating large-scale wind and solar power plants into the next-generation Smart Grid.

“This highly competitive award to GeneSiC will allow us to extend our technical leadership position in the multi-kV Silicon Carbide technology, as well as our commitment to grid-scale alternative energy solutions with solid state solutions,” commented Dr. Ranbir Singh, President of GeneSiC. “Multi-kV SiC Thyristors we’re developing are the key enabling technology towards the realization of Flexible AC Transmission Systems (FACTS) elements and High Voltage DC (HVDC) architectures envisaged towards an integrated, efficient, Smart Grid of the future. GeneSiC’s SiC-based Thyristors offer 10X higher voltage, 100X faster switching frequencies and higher temperature operation in FACTS and HVDC power processing solutions as compared to conventional Silicon-based Thyristors.”

In April 2010, GeneSiC responded to the Agile Delivery of Electrical Power Technology (ADEPT) solicitation from ARPA-E that sought to invest in materials for fundamental advances in high voltage switches that has the potential to leapfrog existing power converter performance while offering reductions in cost. The company’s proposal titled “Silicon Carbide Anode Switched Thyristor for medium voltage power conversion” was selected to provide a lightweight, solid-state, medium voltage energy conversion for high power applications such as solid-state electrical substations and wind turbine generators. Deploying these advanced power semiconductor technologies could provide as much as a 25-30 percent reduction in electricity consumption through increased efficiencies in delivery of electrical power. Innovations selected were to support and promote U.S. businesses through technological leadership, through a highly competitive process.

Silicon carbide is a next-generation semiconductor material with vastly superior properties to conventional silicon, such as the ability to handle ten times the voltage—and one-hundred times the current—at temperatures as high as 300ºC. These characteristics make it ideally suited to high-power applications such as hybrid and electric vehicles, renewable energy (wind and solar) installations, and electrical-grid control systems.

It is now well established that ultra-high voltage (>10kV) Silicon Carbide (SiC) device technology will play a revolutionary role in the next-generation utility grid. Thyristor-based SiC devices offer the highest on-state performance for >5 kV devices, and are widely applicable towards medium voltage power conversion circuits like Fault-Current Limiters, AC-DC converters, Static VAR Compensators and Series Compensators. SiC based Thyristors also offer the best chance of early adoption due to their similarities to conventional power grid elements. Other promising applications and advantages for these devices include:

  • Power-management and power-conditioning systems for Medium Voltage DC conversion sought under Future Naval Capability (FNC) of US Navy, Electro-magnetic launch systems, high energy weapon systems and medical imaging. The 10-100X higher operating frequency capability allows unprecedented improvements in size, weight, volume and ultimately, cost of such systems.
  • A variety of energy storage, high-temperature and high-energy physics applications. Energy storage and power grid applications are receiving increasing attention as the world focuses on more efficient and cost-effective energy-management solutions.

GeneSiC is a fast emerging innovator in the area of SiC power devices and has a strong commitment to the development of Silicon Carbide (SiC) based devices for: (a) HV-HF SiC devices for Power Grid, Pulsed power and Directed Energy Weapons; and (b) High temperature SiC power devices for aircraft actuators and oil exploration.

“We’ve emerged as a leader in ultra-high voltage SiC technology by leveraging our core competency in device and process design with an extensive suite of fabrication, characterization, and test facilities,” concludes Dr. Singh. “GeneSiC’s position has now been effectively validated by the US DOE with this significant follow-on award.”

About GeneSiC Semiconductor

Strategically located near Washington, DC in Dulles, Virginia, GeneSiC Semiconductor Inc. is a leading innovator in high-temperature, high-power and ultra high-voltage silicon carbide (SiC) devices. Current development projects include high-temperature rectifiers, SuperJunction Transistors (SJT) and a wide variety of Thyristor based devices. GeneSiC has or has had prime/sub-contracts from major US Government agencies, including the Department of Energy, Navy, Army, DARPA, and the Department of Homeland Security. The company is currently experiencing substantial growth, and hiring qualified personnel in power-device and detector design, fabrication, and testing. To find out more, please visit www.genesicsemi.com.

Renewable Energy Thrust Nets GeneSiC Semiconductor $1.5M from US Department of Energy

DULLES, VA, November 12, 2008 – The US Department of Energy has awarded GeneSiC Semiconductor two separate grants totaling $1.5M for the development of high-voltage silicon carbide (SiC) devices that will serve as key enablers for wind- and solar-power integration with the nation’s electricity grid.

“These awards demonstrate the DOE’s confidence in GeneSiC’s capabilities, as well as its commitment to alternative energy solutions,” notes Dr. Ranbir Singh, president of GeneSiC. “An integrated, efficient power grid is critical to the nation’s energy future — and the SiC devices we’re developing are critical for overcoming the inefficiencies of conventional silicon technologies.”

The first award is a $750k Phase II SBIR grant for the development of fast, ultra-high-voltage SiC bipolar devices. The second is a $750k Phase II STTR grant for the development of optically gated high-power SiC switches.

Silicon carbide is a next-generation semiconductor material with the ability to handle 10x the voltage and 100x the current of silicon, making it ideally suited to high-power applications such as renewable energy (wind and solar) installations and electrical-grid control systems.

Specifically, the two awards are for:

  • Development of high-frequency, multi-kilovolt SiC gate-turn-off (GTO) power devices. Government and commercial applications include power-management and conditioning systems for ships, the utility industry, and medical imaging.
  • Design and fabrication of optically gated high-voltage, high-power SiC switching devices. Using fiber-optics to switch power is an ideal solution for environments plagued by electro-magnetic interference (EMI), and applications that require ultra high-voltages.

The SiC devices GeneSiC is developing serve a variety of energy storage, power grid, and military applications, which are receiving increasing attention as the world focuses on more efficient and cost-effective energy-management solutions.

Based outside Washington, DC in Dulles, Virginia, GeneSiC Semiconductor Inc. is a leading innovator in high-temperature, high-power and ultra high-voltage silicon carbide (SiC) devices. Current development projects include high-temperature rectifiers, field-effect transistors (FETs) and bipolar devices, as well as particle & photonic detectors. GeneSiC has prime/sub-contracts from major US Government agencies, including the Department of Energy, Navy, DARPA, and the Department of Homeland Security. The company is currently experiencing substantial growth, and hiring qualified personnel in power-device and detector design, fabrication, and testing. To find out more, please visit www.genesicsemi.com.

GeneSiC Semiconductor Awarded Multiple US Department of Energy SBIR and STTR Grants

DULLES, VA, October 23, 2007 — GeneSiC Semiconductor Inc., a fast-rising innovator of high-temperature, high-power and ultra high-voltage silicon carbide (SiC) devices, announced that is has been awarded three separate small business grants from the US Department of Energy during FY07. The SBIR and STTR grants will be used by GeneSiC to demonstrate novel high-voltage SiC devices for a variety of energy storage, power grid, high-temperature and high-energy physics applications. Energy storage and power grid applications are receiving increasing attention as the world focuses on more efficient and cost-effective energy management solutions.

“We are pleased with the level of confidence expressed by various offices within the US Department on Energy with regard to our high-power device solutions. Injecting this funding into our advanced SiC technology programs will result in an industry-leading line SiC devices,” commented GeneSiC’s President, Dr. Ranbir Singh. “The devices being developed in these projects promise to provide critical enabling technology to support a more-efficient power grid, and will open the door to new commercial and military hardware technology that has remained unrealized due to the limitations of contemporary silicon-based technologies.”

The three projects include:

  • A new Phase I SBIR award focused on high current, multi-kV Thyristor-based devices geared towards energy storage applications.
  • A Phase II SBIR follow-on award for development of multi-kV SiC power devices for high voltage power supplies for high power RF system applications awarded by the DOE Office of Science.
  • A Phase I STTR award focused on optically gated high-voltage, high-frequency SiC power devices for environments rich in electro-magnetic interference, including high power RF energy systems, and directed energy weapon systems.

Along with the awards, GeneSiC has recently relocated operations to an expanded laboratory and office building in Dulles, Virginia, significantly upgrading its equipment, infrastructure and is in the process of adding additional key personnel.

“GeneSiC capitalizes on its core competency in device and process design to develop the best possible SiC devices for its customers, backing that up with access to an extensive suite of fabrication, characterization and testing facilities,” concluded Dr. Singh. “We feel those capabilities have been effectively validated by the US DOE with these new and follow-on awards.”

Additional information about the company and its products may be obtained by calling GeneSiC at 703-996-8200 or by visiting www.genesicsemi.com.