Tag: Module

All-Silicon Carbide Junction Transistors-Diodes offered in a 4 Leaded mini-module

Co-packaged SiC Transistor-Diode combination in a robust, isolated, 4-Leaded, mini-module packaging reduces Turn-On energy losses and enables flexible circuit designs for high frequency power converters DULLES, VA, May 13, 2015 — GeneSiC Semiconductor, a pioneer and global supplier of a broad range of Silicon Carbide (SiC) power semiconductors today announces the immediate availability of 20… Read more »

Hybrid SiC Schottky Rectifier/Si IGBT Modules from GeneSiC enables 175°C operation

Dulles, Virginia., March 5, 2013 — GeneSiC Semiconductor, a pioneer and global supplier of a broad range of Silicon Carbide (SiC) power semiconductors today announces the immediate availability of its second generation hybrid mini-modules using 1200 V/100 Amperes SiC Schottky Rectifiers with rugged Silicon IGBTs – the GB100XCP12-227. The performance-price point at which this product… Read more »