SiC MOSFETs

GeneSiC Upcoming MOSFET offer many advantages as compared to competing products. These include

  • Low Drain-Source Resistance, RDS,on
  • Low Gate Charge, Input and Output Capacitances
  • Robust Design for High Avalanche Ruggedness
  • Low conduction loss at high temperatures
  • Intrinsic diode with low reverse recovery charge

SiC MOSFETs:

Part No. VDS
(V)
RDS(on)
(mOhm)
ID
(A)
Package Symbol Compliance Availability
Part No. VDS
(V)
RDS(on)
(mOhm)
ID
(A)
Package Symbol Compliance Availability
GR25MT12K 1200 25 92 RoHSREACH
GR40MT12D 1200 40 62 RoHSREACH
GR40MT12K 1200 40 62 RoHSREACH
GR40MT12J 1200 40 62 RoHSREACH
GR80MT12D 1200 80 36 RoHSREACH
GR80MT12K 1200 80 36 RoHSREACH
GR80MT12J 1200 80 36 RoHSREACH
GR160MT12D 1200 160 20 RoHSREACH
GR160MT12K 1200 160 20 RoHSREACH
GR160MT12J 1200 160 20 RoHSREACH
GR280MT12D 1200 280 12 RoHSREACH
GR280MT12K 1200 280 12 RoHSREACH
GR280MT12J 1200 280 12 RoHSREACH
GR45MT17K 1700 45 75 RoHSREACH
GR1000MT17D 1700 1000 6 RoHSREACH
GR1000MT17J 1700 1000 6 RoHSREACH