SiC MOSFETs

GeneSiC Upcoming MOSFET offer many advantages as compared to competing products. These include

  • Low Drain-Source Resistance, RDS,on
  • Low Gate Charge, Input and Output Capacitances
  • Robust Design for High Avalanche Ruggedness
  • Low conduction loss at high temperatures
  • Intrinsic diode with low reverse recovery charge

SiC MOSFETs:

Part No. VDS
(V)
ID
(A)
RDS(on)
(m?)
Package Symbol Compliance
Part No. VDS
(V)
ID
(A)
RDS(on)
(m?)
Package Symbol Compliance
GR25MT12K 1200 25 92
GR40MT12D 1200 40 62
GR40MT12K 1200 40 62
GR40MT12J 1200 40 62
GR80MT12D 1200 80 36
GR80MT12K 1200 80 36
GR80MT12J 1200 80 36
GR160MT12D 1200 160 20
GR160MT12K 1200 160 20
GR160MT12J 1200 160 20
GR280MT12D 1200 280 12
GR280MT12K 1200 280 12
GR280MT12J 1200 280 12
GR45MT17K 1700 45 75
GR1000MT17D 1700 1000 6
GR1000MT17J 1700 1000 6