GeneSiC is a pioneer and world leader in Silicon Carbide technology, while also invested in high power Silicon technologies. The global leading manufacturers of industrial and defense systems depend on GeneSiC’s technology to elevate the performance and efficiency of their products.
GeneSiC technology plays a key enabling role in conserving energy in a wide array of high power systems. Our technology enables efficient harvesting of renewable energy sources.
GeneSiC electronic components run cooler, faster, and more economically. We hold leading patents on widebandgap power device technologies; a market that is projected to reach $1 billion by 2020.
Our core competency is to add more value to our customers’ end product. Our performance and cost metrics are setting standards in the Silicon Carbide industry.
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Dr. Ranbir Singh founded GeneSiC Semiconductor Inc. in 2004. He has developed critical understanding and published on a wide range of SiC power devices including PiN, JBS and Schottky diodes, MOSFETs, IGBTs, Thyristors and field controlled thyristors. He has co-authored over 100 publications in various refereed journals and conference proceedings and is an inventor on 26 issued US patents. He conducted research on SiC power devices first at Cree Inc., and then at the National Institute of Standards and Technology (NIST), Gaithersburg MD. He has served on the Technical committee of the International Symposium on Power Semiconductor Devices and ICs (ISPSD) from 2002-04, and IEDM in 2004. In May 2003, and again in May 2004 he received the IEEJ Technical Development Award for the development of ultra high voltage SiC devices. He received the B. Tech (Electrical Engineering) degree from Indian Institute of Technology (IIT), Delhi, India. He received his MS & PhD degrees from North Carolina State University (NCSU) under the tutelage of power device pioneer Prof. B. Jayant Baliga.