GeneSiC Semiconductor Inc. develops Silicon Carbide (SiC) based semiconductor devices for high temperature, radiation, and power grid applications.This includes development of rectifiers, FETs, bipolar devices as well as particle & photonic detectors. GeneSiC has, or has access to a extensive suite of device design, fabrication, characterization and testing facilities for such devices.

GeneSiC capitalizes on its core competency in device and process design to develop the best possible SiC devices for its customers. We distinguish ourselves by providing high quality products with a focus on customer's requirements.

GeneSiC has or has had prime/sub-contracts from major US Government agencies including US Dept of Energy, Navy, DARPA, Dept of Homeland Security and DTRA.