Application Notes:
AN-10A Driving SiC Junction Transistors (SJT) with Off-the-Shelf Silicon IGBT Gate Drivers: Single-Level Drive Concept
May 2013 AN-10A Driving SiC Junction Transistors (SJT) with Off-the-Shelf Silicon IGBT Gate Drivers: Single-Level Drive Concept
AN-10B Driving SiC Junction Transistors (SJT): Two-Level Gate Drive Concept
June 2013 AN-10B Driving SiC Junction Transistors (SJT): Two-Level Gate Drive Concept
Double Pulse Switching Board
Sep 2014 Double Pulse Switching Board
High Power Gate Driver Board
Sep 2014 High Power Gate Driver Board
Low Power Gate Driver Board
Sep 2014 Low Power Gate Driver Board
Technical Articles:
1200 V-class 4H-SiC “Super” Junction Transistors with Current Gains of 88 and Ultra-fast Switching capability
Sept, 20111200 V-class 4H-SiC “Super” Junction Transistors with Current Gains of 88 and Ultra-fast Switching capability
1200 V SiC “Super” Junction Transistors operating at 250 °C with extremely low energy losses for power conversion applications
Nov, 2011 1200 V SiC “Super” Junction Transistors operating at 250 °C with extremely low energy losses for power conversion applications
Exploiting the high temperature promise of SiC
Feb, 2012 Exploiting the high temperature promise of SiC
Silicon Carbide “Super” Junction Transistors Operating at 500°C
Apr, 2012 Silicon Carbide “Super” Junction Transistors Operating at 500°C
Stability of Electrical Characteristics of SiC “Super” Junction Transistors under Long-Term DC and Pulsed Operation at various Temperatures
May, 2012 Stability of Electrical Characteristics of SiC “Super” Junction Transistors under Long-Term DC and Pulsed Operation at various Temperatures
