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G3R™ 750V SiC MOSFETs Offer Unparalleled Performance and Reliability

750V G3R SiC MOSFET

DULLES, VA, June 04, 2021 — GeneSiC’s next-generation 750V G3R™SiC MOSFETs will deliver unprecedented levels of performance, robustness and quality that exceeds its counterparts. System benefits include low on-state drops at operating temperatures, faster switching speeds, increased power density, minimal ringing (low EMI) and compact system size. GeneSiC’s G3R™, offered in optimized low-inductance discrete packages (SMD and through hole), are optimized to operate with lowest power losses under all operating conditions and ultra-fast switching speeds. These devices have substantially better performance levels as compared to contemporary SiC MOSFETs.

750V G3R SiC MOSFET

“High-efficiency energy usage has become a critical deliverable in next-generation power converters and SiC power devices continue to be the key components driving this revolution. After years of development work towards achieving the lowest on-state resistance and robust short circuit and avalanche performance, we are excited to release the industry’s best performing 750V SiC MOSFETs. Our G3R™ enable power electronics designers to meet the challenging efficiency, power density and quality goals in applications like solar inverters, EV on-board chargers and server/telecom power supplies. An assured quality, supported by fast turn-around and automotive-qualified high volume manufacturing further enhances their value proposition. ” said Dr. Ranbir Singh, President at GeneSiC Semiconductor.

Features –

  • Industry’s lowest gate charge (QG) and internal gate resistance (RG(INT))
  • Lowest RDS(ON) change with temperature
  • Low output capacitance (COSS) and miler capacitance (CGD)
  • 100% avalanche (UIL) tested during production
  • Industry-leading short circuit withstand capability
  • Fast and reliable body diode with low VF and low QRR
  • High and stable gate threshold voltage (VTH) across all temperature and drain-bias conditions
  • Advanced packaging technology for lower thermal resistance and lower ringing
  • Manufacturing uniformity of RDS(ON), VTH and breakdown voltage (BV)
  • Comprehensive product portfolio and safer supply chain with automotive-qualified high volume manufacturing

Applications –

  • Solar (PV) Inverters
  • EV / HEV Onboard Chargers
  • Server & Telecom Power Supplies
  • Uninterruptible Power Supplies (UPS)
  • DC-DC Converters
  • Switched Mode Power Supplies (SMPS)
  • Energy Storage and Battery Charging
  • Induction Heating

All of GeneSiC Semiconductor’s SiC MOSFETs are targeted for automotive applications (AEC-Q101) and PPAP-capable.

G3R60MT07J – 750V 60mΩ TO-263-7 G3R&trade SiC MOSFET

G3R60MT07K – 750V 60mΩ TO-247-4 G3R&trade SiC MOSFET

G3R60MT07D – 750V 60mΩ TO-247-3 G3R&trade SiC MOSFET

For datasheet and other resources, visit – www.genesicsemi.com/sic-mosfet/ or contact sales@genesicsemi.com

All devices are available for purchase through authorized distributors – www.genesicsemi.com/sales-support

Digi-Key Electronics

Newark Farnell element14

Mouser Electronics

Arrow Electronics

About GeneSiC Semiconductor, Inc.

GeneSiC Semiconductor is a pioneer and world leader in Silicon Carbide technology, while also invested in high power Silicon technologies. The global leading manufacturers of industrial and defense systems depend on GeneSiC’s technology to elevate the performance and efficiency of their products. GeneSiC’s electronic components run cooler, faster, and more economically, and play a key role in conserving energy in a wide array of high power systems. We hold leading patents on wide band gap power device technologies; a market that is projected to reach more than $1 billion by 2022. Our core competency is to add more value to our customers’ end product. Our performance and cost metrics are setting standards in the Silicon Carbide industry.

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5th Generation 650V SiC Schottky MPS™ Diodes for Best-in-Class Efficiency

Gen5 650V SiC Schottky MPS™

DULLES, VA, May 28, 2021 — GeneSiC Semiconductor, a pioneer and global supplier of Silicon Carbide (SiC) power semiconductor devices, announces the availability of 5th generation (GE*** series) SiC Schottky MPS™ rectifiers that are setting up a new benchmark with their superior price-performance index, industry-leading surge current and avalanche robustness, and high quality manufacturing.

“GeneSiC was one of the first SiC manufacturers to commercially supply SiC Schottky rectifiers in 2011. After more than a decade of supplying high-performance and high-quality SiC rectifiers in the industry, we are excited to release our 5th generation of SiC Schottky MPS™ (Merged-PiN-Schottky) diodes that offer industry-leading performance in all aspects to meet the high efficiency and power density goals in applications like server/telecom power supplies and battery chargers. The revolutionary feature that makes our 5th Generation (GE*** series) SiC Schottky MPS™ diodes stand out among its peers is the low built-in voltage (also known as knee-voltage);it enables lowest diode conduction losses at all load conditions – crucial for applications demanding high-efficiency energy usage. In contrast to other competitor SiC diodes also designed to offer low-knee characteristics, an additional feature of our Gen5 diode designs is that they still maintain that high level of avalanche (UIL) ruggedness that our customers have come to expect from GeneSiC’s Gen3 (GC*** series) and Gen4 (GD*** series) SiC Schottky MPS™” said Dr. Siddarth Sundaresan, Vice President of Technology at GeneSiC Semiconductor.

Features –

  • Low Built-In Voltage – Lowest Conduction Losses for All Load Conditions
  • Superior Figure of Merit – QC x VF
  • Optimal Price Performance
  • Enhanced Surge Current Capability
  • 100% Avalanche (UIL) Tested
  • Low Thermal Resistance for Cooler Operation
  • Zero Forward and Reverse Recovery
  • Temperature Independent Fast Switching
  • Positive Temperature Coefficient of VF

Applications –

  • Boost Diode in Power Factor Correction (PFC)
  • Server and Telecom Power Supplies
  • Solar Inverters
  • Uninterruptible Power Supplies (UPS)
  • Battery Chargers
  • Freewheeling / Anti-parallel Diode in Inverters

GE04MPS06E – 650V 4A TO-252-2 SiC Schottky MPS™

GE06MPS06E – 650V 6A TO-252-2 SiC Schottky MPS™

GE08MPS06E – 650V 8A TO-252-2 SiC Schottky MPS™

GE10MPS06E – 650V 10A TO-252-2 SiC Schottky MPS™

GE04MPS06A – 650V 4A TO-220-2 SiC Schottky MPS™

GE06MPS06A – 650V 6A TO-220-2 SiC Schottky MPS™

GE08MPS06A – 650V 8A TO-220-2 SiC Schottky MPS™

GE10MPS06A – 650V 10A TO-220-2 SiC Schottky MPS™

GE12MPS06A – 650V 12A TO-220-2 SiC Schottky MPS™

GE2X8MPS06D – 650V 2x8A TO-247-3 SiC Schottky MPS™

GE2X10MPS06D – 650V 2x10A TO-247-3 SiC Schottky MPS™

All devices are available for purchase through authorized distributors – www.genesicsemi.com/sales-support

For datasheet and other resources, visit – www.genesicsemi.com/sic-schottky-mps/ or contact sales@genesicsemi.com

About GeneSiC Semiconductor, Inc.

GeneSiC Semiconductor is a pioneer and world leader in Silicon Carbide technology, while also invested in high power Silicon technologies. The global leading manufacturers of industrial and defense systems depend on GeneSiC’s technology to elevate the performance and efficiency of their products. GeneSiC’s electronic components run cooler, faster, and more economically, and play a key role in conserving energy in a wide array of high power systems. We hold leading patents on wide band gap power device technologies; a market that is projected to reach more than $1 billion by 2022. Our core competency is to add more value to our customers’ end product. Our performance and cost metrics are setting standards in the Silicon Carbide industry.

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GeneSiC’s New 3rd Generation SiC MOSFETs Featuring the Industry’s Best Figure-of-Merits

DULLES, VA, February 12, 2020 — GeneSiC Semiconductor’s next-generation 1200V G3R™SiC MOSFETs with RDS(ON) levels ranging from 20 mΩ to 350 mΩ deliver unprecedented levels of performance, robustness and quality that exceeds its counterparts. System benefits include higher efficiency, faster switching frequency, increased power density, reduced ringing (EMI) and compact system size.

GeneSiC announces the availability of its industry-leading 3rd generation Silicon Carbide MOSFETs that feature industry-leading performance, robustness and quality to harness never before seen levels of efficiency and system reliability in automotive and industrial applications.

These G3R™ SiC MOSFETs, offered in optimized low-inductance discrete packages (SMD and through hole), are highly optimized for power system designs requiring elevated efficiency levels and ultra-fast switching speeds. These devices have substantially better performance levels as compared to competing products. An assured quality, supported by fast turn-around high volume manufacturing further enhances their value proposition.

“After years of development work towards achieving the lowest on-state resistance and enhanced short circuit performance, we are excited to release the industry’s best performing 1200V SiC MOSFETs with over 15+ discrete and bare chip products. If the next-generation power electronics systems are to meet the challenging efficiency, power density and quality goals in applications like automotive, industrial, renewable energy, transportation, IT and telecom, then they require significantly improved device performance and reliability as compared to presently available SiC MOSFETs” said Dr. Ranbir Singh, President at GeneSiC Semiconductor.

Features –

  • Superior QG x RDS(ON) figure-of-merit – G3R™ SiC MOSFETs feature the industry’s lowest on-state resistance with a very low gate charge, resulting in to 20% better figure-of-merit than any other similar competitor device
  • Low conduction losses at all temperatures – GeneSiC’s MOSFETs feature the softest temperature dependence of on-state resistance to offer very low conduction losses at all temperatures; significantly better than any other trench and planar SiC MOSFETs in the market
  • 100 % avalanche tested – Robust UIL capability is a critical requirement for the majority of field applications. GeneSiC’s 1200V SiC MOSFET discrete are 100 % avalanche (UIL) tested during production
  • Low gate charge and low internal gate resistance – These parameters are critical towards realizing ultra-fast switching and achieving highest efficiencies (low Eon -Eoff) across a wide range of application switching frequencies
  • Normally-off stable operation up to 175°C – All of GeneSiC’s SiC MOSFETs are designed and fabricated with state-of-the-art processes to deliver products that are stable and reliable at all operating conditions without any malfunction risk. The superior gate oxide quality of these devices prevents any threshold (VTH) drift
  • Low device capacitances – G3R™ are designed to drive faster and more efficient with their low device capacitances – Ciss, Coss and Crss
  • Fast and reliable body diode with low intrinsic charge – GeneSiC’s MOSFETs feature benchmark low reverse recovery charge (QRR) at all temperatures; 30% better than any similarly rated competitor device. This offers further reduction in power losses and boosts operating frequencies
  • Ease of use – G3R™ SiC MOSFETs are designed to be driven at +15V / -5V gate drive. This offers broadest compatibility with existing commercial IGBT and SiC MOSFET gate drivers

Applications –

  • Electric Vehicle – Power Train and Charging
  • Solar Inverter and Energy Storage
  • Industrial Motor Drive
  • Uninterruptible Power Supply (UPS)
  • Switched Mode Power Supply (SMPS)
  • Bi-directional DC-DC converters
  • Smart Grid and HVDC
  • Induction Heating and Welding
  • Pulsed Power Application

All devices are available for purchase through authorized distributors – www.genesicsemi.com/sales-support

Digi-Key Electronics

Newark Farnell element14

Mouser Electronics

Arrow Electronics

For datasheet and other resources, visit – www.genesicsemi.com/sic-mosfet or contact sales@genesicsemi.com

All of GeneSiC Semiconductor’s SiC MOSFETs are targeted for automotive applications (AEC-Q101) and PPAP-capable. All devices are offered in industry standard D2PAK, TO-247 and SOT-227 packages.

About GeneSiC Semiconductor, Inc.

GeneSiC Semiconductor is a pioneer and world leader in Silicon Carbide technology, while also invested in high power Silicon technologies. The global leading manufacturers of industrial and defense systems depend on GeneSiC’s technology to elevate the performance and efficiency of their products. GeneSiC’s electronic components run cooler, faster, and more economically, and play a key role in conserving energy in a wide array of high power systems. We hold leading patents on wide band gap power device technologies; a market that is projected to reach more than $1 billion by 2022. Our core competency is to add more value to our customers’ end product. Our performance and cost metrics are setting standards in the Silicon Carbide industry.