GeneSiC Semiconductor, Inc - Energy Efficiency Through Innovation

GeneSiC’s new generation of SiC diodes feature the combination of excellent forward and switching characteristics with best-in-class surge current robustness and thermal conductivity.


  • High Avalanche (UIS) Capability
  • Enhanced Surge Current Capability
  • Superior Figure of Merit QC/IF
  • Low Thermal Resistance for Faster Heat Dissipation
  • 175 °C Maximum Operating Temperature
  • Temperature Independent Switching Behavior
  • Positive Temperature Coefficient of VF
  • Extremely Fast Switching Speeds


  • Low Standby Power Losses
  • Improved Circuit Efficiency (Lower Overall Cost)
  • Low Switching Losses
  • Ease of Paralleling Devices without Thermal Runaway
  • Smaller Heat Sink Requirements
  • Low Reverse Recovery Current
  • Low Device Capacitance
  • Low Reverse Leakage Current


  • Boost Diode in Power Factor Correction (PFC)
  • Switched Mode Power Supplies (SMPS)
  • AC-DC Converters & DC-DC Converters
  • Freewheeling / Anti-parallel Diode in Inverters
  • Uninterruptible Power Supplies (UPS)
  • Solar Inverters & Wind Energy Converters
  • Electric Vehicles (EVs) & DC Fast Chargers
  • Motor Drives
  • LED and HID Lighting
  • Medical Imaging Systems
  • High Voltage Sensing
  • Induction Heating & Welding
  • Pulsed Power

650V SiC Schottky MPS™

1200V SiC Schottky MPS™

1700V SiC Schottky MPS™

Forward Current, IFBare ChipTO-263-7TO-247-2SOT-227
5 AGB05MPS17-263 GB05MPS17-247
10 AGB10MPS17-247
10 AGD10MPS17H
25 AGB25MPS17-247
50 AGB50MPS17-247
100 AGB2X50MPS17-227
150 AGD2X75MPS17N

3300V SiC Schottky MPS™

Forward Current, IFBare ChipDO-214TO-220-FPTO-263-7
GeneSiC Semiconductor, Inc