Rapidly Maturing SiC Junction Transistors Featuring Current Gain (β) > 130, Blocking Voltages Up To 2700 V and Stable Long-Term Operation
Static and Switching Characteristics of 1200 V SiC Junction Transistors with On-chip Integrated Schottky Rectifiers
AN-10A Driving SiC Junction Transistors (SJT) with Off-the-Shelf Silicon IGBT Gate Drivers: Single-Level Drive Concept
1200 V-class 4H-SiC “Super” Junction Transistors with Current Gains of 88 and Ultra-fast Switching capability