GeneSiC releases industry’s best performing 1700V SiC Schottky MPS™ diodes
DULLES, VA, January 7, 2019 — GeneSiC releases a comprehensive portfolio of its third generation 1700V SiC Schottky MPS™ diodes in TO-247-2 package GeneSiC has introduced GB05MPS17-247, GB10MPS17-247, GB25MPS17-247 and…
Hybrid SiC Schottky Rectifier/Si IGBT Modules from GeneSiC enables 175°C operation
DULLES, VA, March 5, 2013 — GeneSiC Semiconductor, a pioneer and global supplier of a broad range of Silicon Carbide (SiC) power semiconductors today announces the immediate availability of its…
GeneSiC introduces Silicon Carbide Junction Transistors
DULLES, VA, February 25, 2013 — GeneSiC Semiconductor, a pioneer and global supplier of a broad range of Silicon Carbide (SiC) power semiconductors today announces the immediate availability of a…
New Physics Lets Thyristor Reach Higher Level
DULLES, VA, August 30, 2011 – New Physics Lets Thyristors Reach Higher Level An electric power grid supplies reliable power with the help of electronic devices that ensure smooth, reliable…
GeneSiC wins the prestigious R&D100 Award for SiC Devices in Grid-connected Solar and Wind Energy Applications
DULLES, VA, July 14, 2011 — R&D Magazine has selected GeneSiC Semiconductor Inc. of Dulles, VA as a recipient of the prestigious 2011 R&D 100 Award for the commercialization of…
