New Physics Lets Thyristor Reach Higher Level
DULLES, VA, August 30, 2011 – New Physics Lets Thyristors Reach Higher Level An electric power grid supplies reliable power with the help of electronic devices that ensure smooth, reliable…
GeneSiC wins the prestigious R&D100 Award for SiC Devices in Grid-connected Solar and Wind Energy Applications
DULLES, VA, July 14, 2011 — R&D Magazine has selected GeneSiC Semiconductor Inc. of Dulles, VA as a recipient of the prestigious 2011 R&D 100 Award for the commercialization of…
GeneSiC Semiconductor Selected to Showcase Technology at 2011 ARPA-E Energy Innovation Summit
DULLES, VA, February 28, 2011 – GeneSiC Semiconductor is excited to announce its selection for the prestigious Technology Showcase at the ARPA-E Energy Innovation Summit, co-hosted by the Department of…
GeneSiC wins power management project from NASA in support of future Venus exploration missions
DULLES, VA, December 14, 2010 – GeneSiC Semiconductor Inc., a key innovator of novel Silicon Carbide (SiC) devices for high temperature, high power, and ultra-high voltage applications, announces selection of…
Multi-kHz, Ultra-High Voltage Silicon Carbide Thyristors sampled to US Researchers
DULLES, VA, November 1, 2010 –In a first of its kind offering, GeneSiC Semiconductor announces the availability of a family of 6.5kV SCR-mode Silicon Carbide Thyristors for use in power…
