GeneSiC wins the prestigious R&D100 Award for SiC-Based Monolithic Transistor-Rectifier Switch
DULLES, VA, December 5, 2019 — R&D Magazine has selected GeneSiC Semiconductor Inc. of Dulles, VA as a recipient of the prestigious 2019 R&D 100 Award for development of SiC-Based…
High-current capable 650V, 1200V and 1700V SiC Schottky MPS™ diodes in mini-module SOT-227 package
DULLES, VA, May 11, 2019 — GeneSiC becomes a market leader in high-current capable (100 A and 200 A) SiC schottky diodes in SOT-227 mini-module GeneSiC has introduced GB2X50MPS17-227, GC2X50MPS06-227…
GeneSiC releases industry’s best performing 1700V SiC Schottky MPS™ diodes
DULLES, VA, January 7, 2019 — GeneSiC releases a comprehensive portfolio of its third generation 1700V SiC Schottky MPS™ diodes in TO-247-2 package GeneSiC has introduced GB05MPS17-247, GB10MPS17-247, GB25MPS17-247 and…
Hybrid SiC Schottky Rectifier/Si IGBT Modules from GeneSiC enables 175°C operation
DULLES, VA, March 5, 2013 — GeneSiC Semiconductor, a pioneer and global supplier of a broad range of Silicon Carbide (SiC) power semiconductors today announces the immediate availability of its…
GeneSiC introduces Silicon Carbide Junction Transistors
DULLES, VA, February 25, 2013 — GeneSiC Semiconductor, a pioneer and global supplier of a broad range of Silicon Carbide (SiC) power semiconductors today announces the immediate availability of a…
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