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News Press Releases GeneSiC in the News

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  • Hybrid SiC Schottky Rectifier/Si IGBT Modules from GeneSiC enables 175°C operation - Dulles, Virginia., March 5, 2013 — GeneSiC Semiconductor, a pioneer and global supplier of a broad range of Silicon Carbide (SiC) power semiconductors today announces the immediate availability of its second generation hybrid mini-modules using 1200 V/100 Amperes SiC Schottky Rectifiers with rugged Silicon IGBTs – the GB100XCP12-227. The performance-price point at which this product... Read more
  • GeneSiC introduces Silicon Carbide Junction Transistors - DULLES, Va., Feb. 25, 2013 /PRNewswire-iReach/ — GeneSiC Semiconductor, a pioneer and global supplier of a broad range of Silicon Carbide (SiC) power semiconductors today announces the immediate availability of a family of 1700V and 1200 V SiC Junction Transistors. Incorporating high voltage, high frequency and high-temperature capable SiC Junction Transistors will increase conversion efficiency... Read more
  • New Physics Lets Thyristor Reach Higher Level - Aug 30, 2011 – Dulles, VA – New Physics Lets Thyristors Reach Higher Level An electric power grid supplies reliable power with the help of electronic devices that ensure smooth, reliable power flow. Until now, silicon-based assemblies have been relied upon, but they have been unable to handle the requirements of the smart grid. Wide-band-gap... Read more
  • GeneSiC wins the prestigious R&D100 Award for SiC Devices in Grid-connected Solar and Wind Energy Applications - DULLES, VA, July 14, 2011 — R&D Magazine has selected GeneSiC Semiconductor Inc. of Dulles, VA as a recipient of the prestigious 2011 R&D 100 Award for the commercialization of Silicon Carbide devices with high voltage ratings. GeneSiC Semiconductor Inc, a key innovator in the Silicon Carbide based power devices was honored last week with... Read more
  • GeneSiC Semiconductor Selected to Showcase Technology at 2011ARPA-E Energy Innovation Summit - Feb 28, 2011 – Dulles, VA – GeneSiC Semiconductor is excited to announce its selection for the prestigious Technology Showcase at the ARPA-E Energy Innovation Summit, co-hosted by the Department of Energy’s Advanced Research Projects Agency – Energy (ARPA-E) and the Clean Technology and Sustainable Industries Organization (CTSI). Hundreds of top technologists and cutting-edge clean... Read more
  • GeneSiC wins power management project from NASA in support of future Venus exploration missions - Dec 14, 2010 – GeneSiC Semiconductor Inc., a key innovator of novel Silicon Carbide (SiC) devices for high temperature, high power, and ultra-high voltage applications, announces selection of its project titled “Integrated SiC Super Junction Transistor-Diode Devices for high-power motor control modules operating at 500 oC” by the US National Aeronautics and Space Administration (NASA)... Read more
  • Multi-kHz, Ultra-High Voltage Silicon Carbide Thyristors sampled to US Researchers - DULLES, VA, Nov. 1, 2010 –In a first of its kind offering, GeneSiC Semiconductor announces the availability of a family of 6.5kV SCR-mode Silicon Carbide Thyristors for use in power electronics for Smart Grid applications. Revolutionary performance advantages of these power devices are expected to spur key innovations in utility-scale power electronics hardware to increase... Read more
  • GeneSiC wins $2.53M from ARPA-E towards development of Silicon Carbide Thyristor-based devices - DULLES, VA, September 28, 2010 – Advanced Research Projects Agency – Energy (ARPA-E) has entered into a Cooperative Agreement with the GeneSiC Semiconductor-led team towards the development of the novel ultra high-voltage silicon carbide (SiC) Thyristor based devices. These devices are expected to be key enablers for integrating large-scale wind and solar power plants into... Read more
  • Renewable Energy Thrust Nets GeneSiC Semiconductor $1.5M from US Department of Energy - Wednesday, November 12th 2008 – The US Department of Energy has awarded GeneSiC Semiconductor two separate grants totaling $1.5M for the development of high-voltage silicon carbide (SiC) devices that will serve as key enablers for wind- and solar-power integration with the nation’s electricity grid. “These awards demonstrate the DOE’s confidence in GeneSiC’s capabilities, as well... Read more
  • GeneSiC Semiconductor Awarded Multiple US Department of Energy SBIR and STTR Grants - DULLES, VA, Oct. 23, 2007 — GeneSiC Semiconductor Inc., a fast-rising innovator of high-temperature, high-power and ultra high-voltage silicon carbide (SiC) devices, announced that is has been awarded three separate small business grants from the US Department of Energy during FY07. The SBIR and STTR grants will be used by GeneSiC to demonstrate novel high-voltage... Read more

Press Releases

  • GeneSiC Interviewed at PCIM 2016 in Nuremberg, Germany - Power System Design Interviews GeneSiC Nuremberg, Germany May 12, 2016 — GeneSiC Semiconductor’s President was interviewed by Alix Paultre of Power Systems Design (http://www.powersystemsdesign.com/psdcast-ranbir-singh-of-genesic-on-their-latest-silicon-carbide-tech/67) at the PCIM show in Nuremberg, Germany.  
  • All-Silicon Carbide Junction Transistors-Diodes offered in a 4 Leaded mini-module - Co-packaged SiC Transistor-Diode combination in a robust, isolated, 4-Leaded, mini-module packaging reduces Turn-On energy losses and enables flexible circuit designs for high frequency power converters DULLES, VA, May 13, 2015 — GeneSiC Semiconductor, a pioneer and global supplier of a broad range of Silicon Carbide (SiC) power semiconductors today announces the immediate availability of 20... Read more
  • General Purpose High Temperature SiC Transistors and Rectifiers Offered at Low Cost - High Temperature (>210oC) Junction Transistors and Rectifiers in small form factor metal can packages offer revolutionary performance benefits to a variety of applications including amplification, low noise circuitry and downhole actuator controls DULLES, VA, March 9, 2015 — GeneSiC Semiconductor, a pioneer and global supplier of a broad range of Silicon Carbide (SiC) power semiconductors... Read more
  • Gate Driver Board and SPICE Models for Silicon Carbide Junction Transistors (SJT) Released - Gate Driver Board optimized for high switching speeds and behavior-based models enable power electronic design engineers to verify and quantify benefits of SJTs in board-level evaluation and circuit simulation DULLES, V.A., Nov 19, 2014 — GeneSiC Semiconductor, a pioneer and global supplier of a broad range of Silicon Carbide (SiC) power semiconductors today announces the... Read more
  • GeneSiC Releases 25 mOhm/1700 V Silicon Carbide Transistors - SiC switches offering lowest conduction losses and superior short circuit capability released for High Frequency Power Circuits Dulles, Virginia., Oct 28, 2014 — GeneSiC Semiconductor, a pioneer and global supplier of a broad range of Silicon Carbide (SiC) power semiconductors today announces the immediate availability of a family of low on-resistance 1700V and 1200 V... Read more
  • GeneSiC Supports Google/IEEE’s Little Box Challenge - GeneSiC’s SiC Transistor and Rectifiers offer significant advantages towards achieving the goals of the Little Box Challenge State-Of-the Art. Silicon Carbide Power Transistors & Rectifiers. Available. Now! GeneSiC has a wide portfolio of products available right now worldwide from top distributors Bare Die Chip form of SiC devices available Directly from factory (please fill the... Read more
  • High Temperature (210 C) SiC Junction Transistors offered in hermetic packages - The promise of high temperature in SiC Transistors realized through compatible industry-standard packages will critically enhance downhole and aerospace actuators and power supplies Dulles, Virginia., Dec 10, 2013 — GeneSiC Semiconductor, a pioneer and global supplier of a broad range of Silicon Carbide (SiC) power semiconductors today announces the immediate availability through its distributors and... Read more
  • SiC Schottky Diodes in SMB (DO-214) packages offer smallest footprints - High Voltage, Reverse Recovery-free SiC Schottky Diodes to critically enable Solar Inverters and High Voltage assemblies by offering smallest form factor surface mount capabilities Dulles, Virginia., Nov 19, 2013 — GeneSiC Semiconductor, a pioneer and global supplier of a broad range of Silicon Carbide (SiC) power semiconductors today announces the immediate availability of a family... Read more
  • Silicon Carbide Schottky Rectifiers extended to 3300 Volt ratings - High Voltage assemblies to benefit from these low capacitance rectifiers offering temperature-independent zero reverse recovery currents in isolated packages Thief River Falls/Dulles, Virginia., May 28, 2013 — GeneSiC Semiconductor, a pioneer and global supplier of a broad range of Silicon Carbide (SiC) power semiconductors announce the immediate availability of 3300 V/0.3 Ampere SiC Schottky Rectifiers... Read more
  • Silicon Carbide Bare Die up to 8000 V Ratings from GeneSiC - High Voltage circuits and assemblies to benefit from SiC chips that offer unprecedented voltage ratings and ultra-high speed switching Dulles, Virginia., Nov 7, 2013 — GeneSiC Semiconductor, a pioneer and global supplier of a broad range of Silicon Carbide (SiC) power semiconductors announce the immediate availability of 8000 V SiC PiN Rectifiers; 8000 V SiC... Read more

GeneSiC in the News