GeneSiC Supports Google/IEEE’s Little Box Challenge

GeneSiC’s SiC Transistor and Rectifiers offer significant advantages towards achieving the goals of the Little Box Challenge

State-Of-the Art. Silicon Carbide Power Transistors & Rectifiers. Available. Now!

GeneSiC has a wide portfolio of products available right now worldwide from top distributors

Bare Die Chip form of SiC devices available Directly from factory (please fill the form below)

Discrete SJTs and Rectifiers in Commercial temperature ratings (175° C)

Discrete HiT SJTs and HiT Rectifiers in High Temperature (up to 250° C)

GeneSiC offers the widest variety of SiC products – in packaged products as well as bare-die format to allow greater design flexibility and innovation. GeneSiC is continuously striving to stay ahead by introducing new, innovative products. If you don’t see the exact product you are looking for today, you may see it in the near future.

High Temperature (210 C) SiC Junction Transistors offered in hermetic packages

The promise of high temperature in SiC Transistors realized through compatible industry-standard packages will critically enhance downhole and aerospace actuators and power supplies

Dulles, Virginia., Dec 10, 2013 — GeneSiC Semiconductor, a pioneer and global supplier of a broad range of Silicon Carbide (SiC) power semiconductors today announces the immediate availability through its distributors and directly a family high temperature packaged 600 V SiC Junction Transistors (SJT) in the 3-50 Amperes current ratings in JEDEC industry-standard through hole and surface mount packages. Incorporating these high temperature, low on-resistance, high frequency SiC Transistors in hermetic packages, high temperature solders and encapsulation will increase conversion efficiency and reduce the size/weight/volume of high temperature power conversion applications.HiT_Schottky

Contemporary high temperature power supply, motor control and actuator circuits used in oil/gas/downhole and aerospace applications suffer from lack of availability of a viable high temperature Silicon Carbide solution. Silicon transistors suffer from low circuit efficiencies and large sizes because they suffer from high leakage currents and low poor switching characteristics. Both these parameters become worse at higher junction temperatures. With thermally constraint environments, junction temperatures rise quite easily even when modest currents are passed. Hermetically packaged SiC transistors offer unique characteristics that promise to revolutionize the capability of downhole and aerospace applications. GeneSiC’s 650 V/3-50 A SiC Junction Transistors feature near zero switching times that does not change with temperature. The 210oC junction temperature-rated devices offer relatively large temperature margins for applications that are operating under extreme environments.

Junction Transistors offered by GeneSiC exhibit ultra-fast switching capability, a square reverse biased safe operation area (RBSOA), as well as temperature-independent transient energy losses and switching times. These switches are gate-oxide free, normally-off, exhibit positive temperature co-efficient of on-resistance, and are capable of being driven by commercial, commonly available 15 V IGBT gate drivers, unlike other SiC switches. While offering compatibility with SiC JFET drivers, SiC Junction Transistors can be easily paralleled because of their matching transient characteristics.

“As downhole and aerospace application designers continue to push the limits of operating frequency, while still demanding high circuit efficiencies, they need SiC switches which can offer a standard of performance, reliability and production uniformity. Utilizing the unique device and fabrication innovations, GeneSiC’s SJT products help designers achieve all that in a more robust solution. These products complement the hermetic packaged SiC rectifier released last year by GeneSiC, and the bare die products released earlier this year, while paving the way for us to offer high temperature, low-inductance, power modules in the near future ” said Dr. Ranbir Singh, President of GeneSiC Semiconductor.

Isolated TO-257 with 600 V SJTs:

  • 65 mOhms/20 Amp (2N7639-GA); 170 mOhms/8 Amp (2N7637-GA); and 425 mOhms/4 Amp (2N7635-GA)
  • Tjmax = 210oC
  • Turn On/Off;       Rise/Fall Times <50 nanoseconds typical.
  • Corresponding Bare Die GA20JT06-CAL (in 2N7639-GA); GA10JT06-CAL (in 2N7637-GA); and GA05JT06-CAL (in 2N7635-GA)

Non-Isolated TO-258 Prototype package with 600 SJTs

  • 25 mOhms/50 Amp (GA50JT06-258 prototype package)
  • Tjmax = 210oC
  • Turn On/Off; Rise/Fall Times <50 nanoseconds typical.
  • Corresponding Bare Die GA50JT06-CAL (in GA50JT06-258)

Surface Mount TO-276 (SMD0.5) with 600 SJTs

  • 65 mOhms/20 Amp (2N7640-GA); 170 mOhms/8 Amp (2N7638-GA); and 425 mOhms/4 Amp (2N7636-GA)
  • Tjmax = 210oC
  • Turn On/Off;       Rise/Fall Times <50 nanoseconds typical.

All devices are 100% tested to full voltage/current ratings and housed in hermetic packages. Technical Support and SPICE circuit models are offered. The devices are immediately available from GeneSiC Directly and/or through its Authorized Distributors.

About GeneSiC Semiconductor Inc.

GeneSiC Semiconductor Inc. is a leading innovator in high-temperature, high-power and ultra-high-voltage silicon carbide (SiC) devices, and global supplier of a broad range of power semiconductors. Its portfolio of devices includes SiC-based rectifier, transistor, and thyristor products, as well as Silicon rectifier products. GeneSiC has developed extensive intellectual property and technical knowledge that encompasses the latest advancements in SiC power devices, with products targeted towards alternative energy, automotive, down ole oil drilling, motor control, power supply, transportation, and uninterruptible power supply applications. GeneSiC has obtained numerous research and development contracts from US Government agencies, including the ARPA-E, Department of Energy, Navy, Army, DARPA, DTRA, and the Department of Homeland Security, as well as major government prime contractors. In 2011, the company won the prestigious R&D100 award for commercializing ultra-high voltage SiC Thyristors.

For more information, please visit http://192.168.88.14/index.php/hit-sic/sjt

SiC Schottky Diodes in SMB (DO-214) packages offer smallest footprints

High Voltage, Reverse Recovery-free SiC Schottky Diodes to critically enable Solar Inverters and High Voltage assemblies by offering smallest form factor surface mount capabilities

Dulles, Virginia., Nov 19, 2013 — GeneSiC Semiconductor, a pioneer and global supplier of a broad range of Silicon Carbide (SiC) power semiconductors today announces the immediate availability of a family of Industry-standard SMB (JEDEC DO-214AA) packaged SiC Rectifiers in the 650 – 3300 V range. Incorporating these high voltage, reverse recovery-free, high frequency and high-temperature capable SiC Diodes will increase conversion efficiency and reduce the size/weight/volume of multi-kV assemblies. These products are targeted towards Micro-solar inverters as well as voltage multiplier circuits used in a wide range of X-Ray, Laser and particle generator power supplies.AllRectifiers

Contemporary Micro-solar inverters and voltage multiplier circuits may suffer from low circuit efficiencies and large sizes because the reverse recovery currents from Silicon rectifiers. At higher rectifier junction temperatures, this situation becomes worse because the reverse recovery current in Silicon rectifiers increases with temperature. With thermally constraints high voltage assemblies, junction temperatures rise quite easily even when modest currents are passed. High Voltage SiC rectifiers offer unique characteristics that promises to revolutionize the micro-solar inverters and high voltage assemblies. GeneSiC’s 650 V/1 A; 1200 V/2 A and 3300 V/0.3 A Schottky rectifiers feature zero reverse recovery current that does not change with temperature. The 3300 V-rated devices offer relatively high voltage in a single device allows a reduction in voltage multiplication stages required in typical high voltage generator circuits, through use of higher AC input voltages. The near-ideal switching characteristics allow the elimination/dramatic reduction of voltage balancing networks and snubber circuits. The SMB (DO-214AA) overmolded package features industry-standard form factor for surface mount assemblies.

“These product offerings come from years of sustained development efforts at GeneSiC towards offering compelling devices and packages. We believe the SMB form factor is a key differentiator for the Micro Solar Inverter and Voltage Multiplier market, and will allow significant benefits to our customers. GeneSiC’s low VF, low capacitance SiC Schottky Rectifiers and improved SMB packages enables this breakthrough product” said Dr. Ranbir Singh, President of GeneSiC Semiconductor.

1200 V/2 A SMB SiC Schottky Diode (GB02SLT12-214) Technical Highlights

  • Typical VF = 1.5 V
  • Tjmax = 175oC
  • Reverse Recover Charge = 14 nC.

3300 V/0.3 A SMB SiC Schottky Diode (GAP3SLT33-214) Technical Highlights

  • Typical VF = 1.7 V
  • Tjmax = 175oC
  • Reverse Recover Charge = 52 nC.

650 V/1 A SMB SiC Schottky Diode (GB01SLT06-214) Technical Highlights

  • Typical VF = 1.5 V
  • Tjmax = 175oC
  • Reverse Recover Charge = 7 nC.

All devices are 100% tested to full voltage/current ratings and housed in Halogen-Free, RoHS compliant SMB (DO-214AA) packages. Technical Support and SPICE circuit models are offered. The devices are immediately available from GeneSiC’s Authorized Distributors.

About GeneSiC Semiconductor Inc.

GeneSiC Semiconductor Inc. is a leading innovator in high-temperature, high-power and ultra-high-voltage silicon carbide (SiC) devices, and global supplier of a broad range of power semiconductors. Its portfolio of devices includes SiC-based rectifier, transistor, and thyristor products, as well as Silicon rectifier products. GeneSiC has developed extensive intellectual property and technical knowledge that encompasses the latest advancements in SiC power devices, with products targeted towards alternative energy, automotive, down ole oil drilling, motor control, power supply, transportation, and uninterruptible power supply applications. GeneSiC has obtained numerous research and development contracts from US Government agencies, including the ARPA-E, Department of Energy, Navy, Army, DARPA, DTRA, and the Department of Homeland Security, as well as major government prime contractors. In 2011, the company won the prestigious R&D100 award for commercializing ultra-high voltage SiC Thyristors.

For more information, please visit http://192.168.88.14/index.php/sic-products/schottky

Silicon Carbide Schottky Rectifiers extended to 3300 Volt ratings

High Voltage assemblies to benefit from these low capacitance rectifiers offering temperature-independent zero reverse recovery currents in isolated packages

Thief River Falls/Dulles, Virginia., May 28, 2013 — GeneSiC Semiconductor, a pioneer and global supplier of a broad range of Silicon Carbide (SiC) power semiconductors announce the immediate availability of 3300 V/0.3 Ampere SiC Schottky Rectifiers – the GAP3SLT33-220FP. This unique product represents the highest voltage SiC rectifier on the market, and is specifically targeted towards voltage multiplier circuits and high voltage assemblies used in a wide range of X-Ray, Laser and particle generator power supplies.3300 V SiC Schottky diode GeneSiC

Contemporary voltage multiplier circuits suffer from low circuit efficiencies and large sizes because the reverse recovery currents from Silicon rectifiers discharge the parallel connected capacitors. At higher rectifier junction temperatures, this situation becomes worse because the reverse recovery current in Silicon rectifiers increases with temperature. With thermally constraints high voltage assemblies, junction temperatures rise quite easily even when modest currents are passed. High Voltage SiC rectifiers offer unique characteristics that promises to revolutionize the high voltage assemblies. GeneSiC’s 3300 V/0.3 A Schottky rectifiers feature zero reverse recovery current that does not change with temperature. This relatively high voltage in a single device allows a reduction in voltage multiplication stages required in typical high voltage generator circuits, through use of higher AC input voltages. The near-ideal switching characteristics allow the elimination/dramatic reduction of voltage balancing networks and snubber circuits. The TO-220 Full Pack overmolded isolated package features industry-standard form factor with increased pin spacing in through hole assemblies.3300 V SiC Schottky diode SMB GeneSiC

“This product offering comes from years of sustained efforts at GeneSiC. We believe the 3300 V rating is a key differentiator for the high voltage generator market, and will allow significant benefits to our customers. GeneSiC’s low VF, low capacitance SiC Schottky Rectifiers enables this breakthrough product” said Dr. Ranbir Singh, President of GeneSiC Semiconductor.

3300 V/0.3 A SiC Rectifier Technical Highlights

  • On-state Drop of 1.7 V at 0.3 A
  • Positive temperature coefficient on VF
  • Tjmax = 175oC
  • Capacitive charge 52 nC (typical).

All devices are 100% tested to full voltage/current ratings and housed in Halogen-Free, RoHS compliant industry-standard TO-220FP (Full Pack) packages. The devices are immediately available from GeneSiC’s Authorized Distributor, Digikey.

About GeneSiC Semiconductor Inc.

GeneSiC Semiconductor Inc. is a leading innovator in high-temperature, high-power and ultra-high-voltage silicon carbide (SiC) devices, and global supplier of a broad range of power semiconductors. Its portfolio of devices includes SiC-based rectifier, transistor, and thyristor products, as well as Silicon rectifier products. GeneSiC has developed extensive intellectual property and technical knowledge that encompasses the latest advancements in SiC power devices, with products targeted towards alternative energy, automotive, down ole oil drilling, motor control, power supply, transportation, and uninterruptible power supply applications. GeneSiC has obtained numerous research and development contracts from US Government agencies, including the ARPA-E, Department of Energy, Navy, Army, DARPA, DTRA, and the Department of Homeland Security, as well as major government prime contractors. In 2011, the company won the prestigious R&D100 award for commercializing ultra-high voltage SiC Thyristors.

For more information, please visit www.genesicsemi.com

Silicon Carbide Bare Die up to 8000 V Ratings from GeneSiC

High Voltage circuits and assemblies to benefit from SiC chips that offer unprecedented voltage ratings and ultra-high speed switching

Dulles, Virginia., Nov 7, 2013 — GeneSiC Semiconductor, a pioneer and global supplier of a broad range of Silicon Carbide (SiC) power semiconductors announce the immediate availability of 8000 V SiC PiN Rectifiers; 8000 V SiC Schottky Rectifiers, 3300 V SiC Schottky Rectifiers and 6500 V SiC Thyristors in bare die format. These unique products represents the highest voltage SiC devices on the market, and is specifically targeted towards oil and gas instrumentation, voltage multiplier circuits and high voltage assemblies.

Contemporary ultra-high voltage circuits suffer from low circuit efficiencies and large sizes because the reverse recovery currents from Silicon rectifiers discharge the parallel connected capacitors. At higher rectifier junction temperatures, this situation worsens further since the reverse recovery current in Silicon rectifiers increases with temperature. With thermally constraints high voltage assemblies, junction temperatures rise quite easily even when modest currents are passed. High Voltage SiC rectifiers offer unique characteristics that promises to revolutionize the high voltage assemblies. GeneSiC’s 8000 V and 3300 V Schottky rectifiers feature zero reverse recovery current that does not change with temperature. This relatively high voltage in a single device allows a reduction in voltage multiplication stages required in typical high voltage generator circuits, through use of higher AC input voltages. The near-ideal switching characteristics allow the elimination/dramatic reduction of voltage balancing networks and snubber circuits. 8000 V PiN Rectifiers offer higher current levels and higher operating temperatures. 6500 V SiC Thyristor chips are also available to accelerate R&D of new systems.

“These products showcase GeneSiC’s strong lead in the development of SiC chips in the multi-kV ratings. We believe the 8000 V rating goes beyond what Silicon devices can offer at rated temperatures, and will allow significant benefits to our customers. GeneSiC’s low VF, low capacitance SiC Rectifiers and Thyristors will enable system level benefits not possible before” said Dr. Ranbir Singh, President of GeneSiC Semiconductor.

8000 V/2 A SiC Bare Die PiN Rectifier Technical Highlights

  • Tjmax = 210oC
  • Reverse Leakage Currents < 50 uA at 175oC
  • Reverse Recovery Charge 558 nC (typical).

8000 V/50 mA SiC Bare Die Schottky Rectifier Technical Highlights

  • Total Capacitance 25 pF (typical, at -1 V, 25oC).
  • Positive temperature coefficient on VF
  • Tjmax = 175oC

6500 V SiC Thyristor Bare Die Technical Highlights

  • Three offerings – 80 Amperes (GA080TH65-CAU); 60 Amperes (GA060TH65-CAU); and 40 Amperes (GA040TH65-CAU)
  • Tjmax = 200oC

3300 V/0.3 A SiC Bare Die Rectifier Technical Highlights

  • On-state Drop of 1.7 V at 0.3 A
  • Positive temperature coefficient on VF
  • Tjmax = 175oC
  • Capacitive charge 52 nC (typical).

About GeneSiC Semiconductor Inc.

GeneSiC Semiconductor Inc. is a leading innovator in high-temperature, high-power and ultra-high-voltage silicon carbide (SiC) devices, and global supplier of a broad range of power semiconductors. Its portfolio of devices includes SiC-based rectifier, transistor, and thyristor products, as well as Silicon rectifier products. GeneSiC has developed extensive intellectual property and technical knowledge that encompasses the latest advancements in SiC power devices, with products targeted towards alternative energy, automotive, down ole oil drilling, motor control, power supply, transportation, and uninterruptible power supply applications. GeneSiC has obtained numerous research and development contracts from US Government agencies, including the ARPA-E, Department of Energy, Navy, Army, DARPA, DTRA, and the Department of Homeland Security, as well as major government prime contractors. In 2011, the company won the prestigious R&D100 award for commercializing ultra-high voltage SiC Thyristors.

For more information, please visit http://192.168.88.14/index.php/hit-sic/baredie