Tag: Transistor

All-Silicon Carbide Junction Transistors-Diodes offered in a 4 Leaded mini-module

Co-packaged SiC Transistor-Diode combination in a robust, isolated, 4-Leaded, mini-module packaging reduces Turn-On energy losses and enables flexible circuit designs for high frequency power converters DULLES, VA, May 13, 2015 — GeneSiC Semiconductor, a pioneer and global supplier of a broad range of Silicon Carbide (SiC) power semiconductors today announces the immediate availability of 20… Read more »

General Purpose High Temperature SiC Transistors and Rectifiers Offered at Low Cost

High Temperature (>210oC) Junction Transistors and Rectifiers in small form factor metal can packages offer revolutionary performance benefits to a variety of applications including amplification, low noise circuitry and downhole actuator controls DULLES, VA, March 9, 2015 — GeneSiC Semiconductor, a pioneer and global supplier of a broad range of Silicon Carbide (SiC) power semiconductors… Read more »

Gate Driver Board and SPICE Models for Silicon Carbide Junction Transistors (SJT) Released

Gate Driver Board optimized for high switching speeds and behavior-based models enable power electronic design engineers to verify and quantify benefits of SJTs in board-level evaluation and circuit simulation DULLES, V.A., Nov 19, 2014 — GeneSiC Semiconductor, a pioneer and global supplier of a broad range of Silicon Carbide (SiC) power semiconductors today announces the… Read more »

GeneSiC Releases 25 mOhm/1700 V Silicon Carbide Transistors

SiC switches offering lowest conduction losses and superior short circuit capability released for High Frequency Power Circuits Dulles, Virginia., Oct 28, 2014 — GeneSiC Semiconductor, a pioneer and global supplier of a broad range of Silicon Carbide (SiC) power semiconductors today announces the immediate availability of a family of low on-resistance 1700V and 1200 V… Read more »

GeneSiC Supports Google/IEEE’s Little Box Challenge

GeneSiC’s SiC Transistor and Rectifiers offer significant advantages towards achieving the goals of the Little Box Challenge State-Of-the Art. Silicon Carbide Power Transistors & Rectifiers. Available. Now! GeneSiC has a wide portfolio of products available right now worldwide from top distributors Bare Die Chip form of SiC devices available Directly from factory (please fill the… Read more »

High Temperature (210 C) SiC Junction Transistors offered in hermetic packages

The promise of high temperature in SiC Transistors realized through compatible industry-standard packages will critically enhance downhole and aerospace actuators and power supplies Dulles, Virginia., Dec 10, 2013 — GeneSiC Semiconductor, a pioneer and global supplier of a broad range of Silicon Carbide (SiC) power semiconductors today announces the immediate availability through its distributors and… Read more »

SiC Schottky Diodes in SMB (DO-214) packages offer smallest footprints

High Voltage, Reverse Recovery-free SiC Schottky Diodes to critically enable Solar Inverters and High Voltage assemblies by offering smallest form factor surface mount capabilities Dulles, Virginia., Nov 19, 2013 — GeneSiC Semiconductor, a pioneer and global supplier of a broad range of Silicon Carbide (SiC) power semiconductors today announces the immediate availability of a family… Read more »

Silicon Carbide Schottky Rectifiers extended to 3300 Volt ratings

High Voltage assemblies to benefit from these low capacitance rectifiers offering temperature-independent zero reverse recovery currents in isolated packages Thief River Falls/Dulles, Virginia., May 28, 2013 — GeneSiC Semiconductor, a pioneer and global supplier of a broad range of Silicon Carbide (SiC) power semiconductors announce the immediate availability of 3300 V/0.3 Ampere SiC Schottky Rectifiers… Read more »

Silicon Carbide Bare Die up to 8000 V Ratings from GeneSiC

High Voltage circuits and assemblies to benefit from SiC chips that offer unprecedented voltage ratings and ultra-high speed switching Dulles, Virginia., Nov 7, 2013 — GeneSiC Semiconductor, a pioneer and global supplier of a broad range of Silicon Carbide (SiC) power semiconductors announce the immediate availability of 8000 V SiC PiN Rectifiers; 8000 V SiC… Read more »

Hybrid SiC Schottky Rectifier/Si IGBT Modules from GeneSiC enables 175°C operation

Dulles, Virginia., March 5, 2013 — GeneSiC Semiconductor, a pioneer and global supplier of a broad range of Silicon Carbide (SiC) power semiconductors today announces the immediate availability of its second generation hybrid mini-modules using 1200 V/100 Amperes SiC Schottky Rectifiers with rugged Silicon IGBTs – the GB100XCP12-227. The performance-price point at which this product… Read more »