SiC Thyristors:

Bipolar devices like SiC based Thyristors (for example, Gate Turn Off GTO-Thyristors) made with SiC offer 20-50X lower switching losses as compared to conventional semiconductors, and lower on-state voltage drop for >6 kV ratings. The opportunity of operating a device at a higher current density to increase total current with reasonable yield, the poor reliability of MOS at high temperatures, and the relatively low channel mobilities obtained in SiC MOSFETs may make Thyristor-based devices attractive for >6 kV applications.

GeneSiC is developing innovative SiC Thyristors for 6.5 kV - 13 kV Voltage Ratings. Significant advantages of these devices are:

• 150°C operating temperatures
• Faster turn-on and turn-off performance as compared to traditional Si devices
• Lowest-in-class on-resistance for a given voltage and current rating
• Lowest-in-class switching losses

Our SiC Thyristor Lineup:

Part No.	VFBM	IT(AVM)@Tj	Tj	VKA(ON)@Tj	Irm	Qrr	tR	tq	Package
	(V)	(A)	(ºC)	(V)	(A)	(µC)	(ns)	(µs)
GA040TH65	6500	40	150	3.9	11	1.8	200	4.7	Custom*
GA060TH65	6500	60	150	3.7	15	2.95	170	6.7	Custom*
GA080TH65	6500	80	150	3.45	20	4.2	190	10.1	Custom*

*The Custom Package has the same base footprint as a SOT-227