GeneSiC is developing innovative SiC ultra high voltage bipolar devices (SiC PiN Rectifiers and Thyristors) in the 6.5 kV – 13 kV Voltage Ratings. Significant advantages of these devices are:
- 150°C operating temperatures
- Faster turn-on and turn-off performance as compared to traditional Si devices
- Lowest-in-class on-resistance for a given voltage and current rating
- Lowest-in-class switching losses
GeneSiC’s Silicon Carbide PiN Rectifier:
GeneSiC’s Silicon Carbide Thyristors:
Bipolar devices like SiC basedPiNs and Thyristors (for example, Gate Turn Off GTO-Thyristors) made with SiC offer 20-50X lower switching losses as compared to conventional semiconductors, and lower on-state voltage drop for >6 kV ratings. The opportunity of operating a device at a higher current density to increase total current with reasonable yield, the poor reliability of MOS at high temperatures, and the relatively low channel mobilities obtained in SiC MOSFETs may make Thyristor-based devices attractive for >6 kV applications.