SiC Ultra High Voltage PiN Rectifiers and Thyristors

GeneSiC is developing innovative SiC ultra high voltage bipolar devices (SiC PiN Rectifiers and Thyristors) in the 6.5 kV – 13 kV Voltage Ratings. Significant advantages of these devices are:

  • 150°C operating temperatures
  • Faster turn-on and turn-off performance as compared to traditional Si devices
  • Lowest-in-class on-resistance for a given voltage and current rating
  • Lowest-in-class switching losses

GeneSiC’s Silicon Carbide PiN Rectifier:

Part No. VRRM
(V)
IF (DC)
(A)
Package symbollink SPICE Model Compliance Availability
GA01PNS80-220 8000 2 GA01PNS80-220-SPC RoHSREACH
GA01PNS150-220 15000 1 GA01PNS150-220-SPC RoHSREACH


GeneSiC’s Silicon Carbide Thyristors:

Part No. VFBM
(V)
IT(AVM)@Tj
(A)
VKA(ON)@Tj
(V)
Irm
(A)
tR
(ns)
Package Symbol Availability
GA040TH65 6500 40 3 11 200
GA060TH65 6500 60 3 15 170
GA080TH65 6500 80 3 20 190


Bipolar devices like SiC basedPiNs and Thyristors (for example, Gate Turn Off GTO-Thyristors) made with SiC offer 20-50X lower switching losses as compared to conventional semiconductors, and lower on-state voltage drop for >6 kV ratings. The opportunity of operating a device at a higher current density to increase total current with reasonable yield, the poor reliability of MOS at high temperatures, and the relatively low channel mobilities obtained in SiC MOSFETs may make Thyristor-based devices attractive for >6 kV applications.

GeneSiC SiC Thyristor High Voltage