SiC Junction Transistors

SJT GeneSiC Junction TransistorGeneSiC is offering and continuously improving a new innovative power device, the Silicon Carbide Junction Transistor (SJT). SJTs are “Super-High” current gain SiC BJTs being developed by GeneSiC in 1200 V – 10 kV ratings. The SJTs are gate-oxide free, normally-off, quasi-majority carrier devices with a square reverse biased safe operation area (RBSOA) and a slightly positive temperature co-efficient of on-resistance. The SJT is a current controlled device require a small gate current that can be driven by commercial, commonly available gate drivers. Incorporating high voltage, high frequency and high-temperature capable SiC SJTs will increase conversion efficiency and reduce the size/weight/volume of power electronics.

  • Normally-OFF
  • Compatible with standard MOSFET/IGBT Drivers
  • Compatible with anti-parallel diode connection
  • Low Gate Capacitance
  • Best in class temperature independent switching and blocking performance
  • Positive coefficient for easy paralleling
  • Low gate charge
  • Lowest switching losses for power switches AND low EMI
  • Highest On-Current SiC Switch

Our SiC Junction Transistor Products rated at 175°C:

Part No. VDS
(V)
RDS(ON)
(mΩ)
ID,max(DC)
(A)
hFE
(A/A)
Package SPICE Model Compliance Availability
GA03JT12-247 1200 470 3 54 GA03JT12-247-SPC RoHSREACH Production
GA05JT12-263 1200 210 15 80 GA05JT12-263-SPC RoHSREACH 2014, Q3
GA05JT12-247 1200 210 15 80 GA05JT12-247-SPC RoHSREACH 2014, Q3
GA06JT12-247 1200 220 6 54 GA06JT12-247-SPC RoHSREACH Production
GA10JT12-263 1200 120 25 80 GA10JT12-263-SPC RoHSREACH 2014, Q3
GA10JT12-247 1200 120 25 80 GA10JT12-247-SPC RoHSREACH 2014, Q3
GA20JT12-263 1200 60 45 80 GA20JT12-263-SPC RoHSREACH 2014, Q3
GA20JT12-247 1200 60 45 80 GA20JT12-247-SPC RoHSREACH 2014, Q3
GA50JT12-247 1200 25 100 95 GA50JT12-247-SPC RoHSREACH 2014, Q3
GA04JT17-247 1700 220 15 80 GA04JT17-247-SPC RoHSREACH Production
GA08JT17-247 1700 230 8 60 GA08JT17-247-SPC RoHSREACH Production
GA16JT17-247 1700 65 45 80 GA16JT17-247-SPC RoHSREACH Production
GA50JT17-247 1700 25 100 95 GA50JT17-247-SPC RoHSREACH Production


*If you’re looking for GeneSiC’s SJT offerings for >225 C ratings, please click: High Temperature SiC Junction Transistors

Gate Driver Boards compatible with these SJT devices:

Gate Driver boards are offered which enable efficient switching of SJT devices. These boards are designed to offer the low Eon/Eoff, and low continuous driver losses. GeneSiC strives to make all components/Board Layouts/Gerber files freely available/downloadable, so that end-users can incorporate these gate drivers into their main boards or get the boards fabricated themselves. There might be better/cheaper boards realized by customers.

Part No. VIN
(V)
VISO
supply
(V)
VISO
signal
(V)
PDr,cont
(W)
PDr,sw
(W)
Compatibility Package Gerber Files Availability
GA03IDDJT30-FR4 12 3000 6000 3 2 >=60 mΩ SJTs Production
GA15IDDJT22-FR4 12 2200 6000 15 >3 < 60 mΩ SJTs Production


Evaluation Boards

Evaluation boards are offered to analyze and benchmark SiC devices

Part No. Description Vmax
(V)
Imax
(A)
Compatibility Package Gerber Files Availability
GA100SBJT12-FR4 Double-Pulse SJT Switching Board 1200 100 20-240 (mΩ) SiC SJTs Production