Navitas Semiconductor, Industry-Leader in Gallium Nitride Power ICs, Announces Acquisition of GeneSiC Semiconductor, Silicon Carbide Pioneer

 

El Segundo, CA., August 15th, 2022 — Navitas Semiconductor (Nasdaq: NVTS), the industry leader in gallium nitride (GaN) power ICs, today announced the acquisition of GeneSiC Semiconductor, a silicon carbide (SiC) pioneer with deep expertise in SiC power device design and process. The transaction is immediately accretive to Navitas as GeneSiC is highly profitable, with more than 25% EBITDA margins.  Calendar 2022 revenues are expected to be approximately $25 million with demonstrated annual growth rates of over 60%. The combined company creates a comprehensive, industry-leading technology portfolio in next-generation power semiconductors – both GaN and SiC – with an aggregate market opportunity estimated at over $20 billion per year by 2026.

“GeneSiC is an ideal partner for Navitas with their focus and success in developing industry-leading SiC technology,” said Gene Sheridan, Navitas CEO and co-founder. “Navitas has significant investments in global sales, operations and technical support teams, along with system design centers in EV and data centers. These capabilities are a perfect complement to GeneSiC and will further accelerate their growth in both synergistic and new customers and markets. Today, we have taken a major step in our company’s mission to ‘Electrify Our World™’ and drive our planet’s transition from fossil fuels to clean,      efficient, electrical energy.”

“GeneSiC’s patent-protected, advanced technology and innovative, experienced team are critical factors in the growth of our company. Our SiC MOSFETs offer the industry’s highest performance, reliability, and ruggedness – parameters critical towards widespread adoption of electric vehicles and associated infrastructure,” said GeneSiC President Dr. Ranbir Singh. “With almost 20 years of leading-edge R&D, proven platforms, over 500 diverse customers, and growing revenue and profitability, we can leverage Navitas’ mass-production expertise and go-to-market strategy to accelerate SiC revenues. We are very excited about this new partnership.”

Dr. Singh joins Navitas as Executive Vice-President for the GeneSiC business and Navitas expects to retain all members of the GeneSiC team.

In power semiconductors, both GaN and SiC are superior materials to legacy silicon, enabling higher speeds, greater energy savings, faster charging, and significantly reduced size, weight, and cost. Together, these complementary, next-generation materials address a broad range of applications from 20W smartphone chargers, to 20kW EV chargers, to 20MW grid-infrastructure systems and everything in between. With over 500 customers, the GeneSiC acquisition delivers diversified and synergistic markets and customers, and accelerates Navitas’ revenue in strategic, higher-power applications:

  • Electric Vehicle:  Navitas GaN ICs are optimized for 400V EV systems, and GeneSiC technology is ideal for 800V EV systems, with existing revenue and development customers which include BYD – the world’s #1 EV supplier, Land Rover, Mercedes AMG, Geely, Shinry, LG Magna, Saab, and Inovance, along with dozens of others.
  • Solar & Energy Storage: Navitas GaN ICs serve residential solar, while GeneSiC has immediate revenue in higher power, commercial solar and energy storage customers, including APS, Advanced Energy, Chint, Sungrow, Growatt, CATL, Exide and many others.
  • Broader Industrial Markets: GeneSiC high-voltage products bring immediate revenue in a wide range of additional industrial markets which include rail, UPS, wind, grid power, industrial motors, and medical imaging.

Transaction Details

The acquisition of GeneSiC is expected to be immediately accretive to Navitas’ earnings per share.                     Total consideration consisted of approximately $100 million in cash, 24.9 million shares of Navitas stock and possible earn-out payments of up to $25 million conditioned on the achievement of substantial revenue targets for the GeneSiC business over the four fiscal quarters ending September 30, 2023. More information about GeneSiC is available at ir.navitassemi.com.

Advisors

Jefferies LLC acted as financial advisor to Navitas and Bank of America acted as financial advisor to GeneSiC. TCF Law Group, PLLC acted as legal advisor to Navitas and Gibson, Dunn & Crutcher LLP acted as legal advisor to GeneSiC.

Conference Call and Webcast Information

The GeneSiC acquisition will be discussed as part of the Navitas Q2 2022 earnings call:

When: Monday, August 15th, 2022

Time: 2:00 p.m. Pacific / 5:00 p.m. Eastern

Toll Free Dial-in: (800) 715-9871 or (646) 307-1963

Conference ID: 6867001

Live Webcast: https://edge.media-server.com/mmc/p/tqt3b9y7

Replay: A replay of the call will be accessible from the Investor Relations section of the Company’s website at https://ir.navitassemi.com/.

Cautionary Statement Regarding Forward-Looking Statements

This press release includes “forward-looking statements” within the meaning of Section 21E of the Securities Exchange Act of 1934, as amended. Forward-looking statements may be identified by the use of words such as “we expect” or “are expected to be,” “estimate,” “plan,” “project,” “forecast,” “intend,” “anticipate,” “believe,” “seek,” or other similar expressions that predict or indicate future events or trends or that are not statements of historical matters. These forward-looking statements include, but are not limited to, statements regarding estimates and forecasts of other financial and performance metrics and projections of market opportunity and market share. These statements are based on various assumptions, whether or not identified in this press release. These statements are also based on current expectations of the management of Navitas and are not predictions of actual performance. Such forward-looking statements are provided for illustrative purposes only and are not intended to serve as, and must not be relied on by any investor as, a guarantee, an assurance, a prediction or a definitive statement of fact or probability. Actual events and circumstances are difficult or impossible to predict and will differ from assumptions and expectations. Many actual events and circumstances that affect performance are beyond the control of Navitas. Forward-looking statements are subject to a number of risks and uncertainties, including the possibility that the expected growth of Navitas’ and GeneSiC’s businesses will not be realized, or will not be realized within expected time periods, due to, among other things, the failure to successfully integrate GeneSiC into Navitas’ business and operational systems; the effect of the acquisition on customer and supplier relationships or the failure to retain and expand those relationships; the success or failure of other business development efforts; Navitas’ financial condition and results of operations; Navitas’ ability to accurately predict future revenues for the purpose of appropriately budgeting and adjusting Navitas’ expenses; Navitas’ ability to diversify its customer base and develop relationships in new markets; Navitas’ ability to scale its technology into new markets and applications; the effects of competition on Navitas’ business, including actions of competitors with an established presence and resources in markets we hope to penetrate, including silicon carbide markets; the level of demand in Navitas’ and GeneSiC’s customers’ end markets, both generally and with respect to successive generations of products or technology; Navitas’ ability to attract, train and retain key qualified personnel; changes in government trade policies, including the imposition of tariffs; the impact of the COVID-19 pandemic on Navitas’ business, results of operations and financial condition; the impact of the COVID-19 pandemic on the global economy, including but not limited to Navitas’ supply chain and the supply chains of customers and suppliers; regulatory developments in the United States and foreign countries; and Navitas’ ability to protect its intellectual property rights. These and other risk factors are discussed in the Risk Factors section beginning on p. 11 of our annual report on Form 10-K for the year ended December 31, 2021, which we filed with the Securities and Exchange Commission (the “SEC”) on March 31, 2022 and as thereafter amended, and in other documents we file with the SEC, including our quarterly reports on Form 10-Q. If any of these risks materialize or our assumptions prove incorrect, actual results could differ materially from the results implied by these forward-looking statements. There may be additional risks that Navitas is not aware of or that Navitas currently believes are immaterial that could also cause actual results to differ materially from those contained in the forward-looking statements. In addition, forward-looking statements reflect Navitas’ expectations, plans or forecasts of future events and views as of the date of this press release. Navitas anticipates that subsequent events and developments will cause Navitas’ assessments to change. However, while Navitas may elect to update these forward-looking statements at some point in the future, Navitas specifically disclaims any obligation to do so. These forward-looking statements should not be relied upon as representing Navitas’ assessments as of any date subsequent to the date of this press release.

About Navitas

Navitas Semiconductor (Nasdaq: NVTS) is the industry leader in gallium nitride (GaN) power ICs, founded in 2014. GaNFast™ power ICs integrate GaN power with drive, control, sensing and protection to enable faster charging, higher power density and greater energy savings for mobile, consumer, data center, EV and solar markets. Over 165 Navitas patents are issued or pending. Over 50 million units have been shipped with zero reported GaN field failures, and Navitas introduced the industry’s first and only 20-year warranty. Navitas is the world’s first semiconductor company to be CarbonNeutral®-certified.

About GeneSiC Semiconductor, Inc.

GeneSiC Semiconductor is a pioneer and world-leader in silicon carbide (SiC) technology. Leading global manufacturers depend on GeneSiC’s technology to elevate the performance and efficiency of their products. GeneSiC’s electronic components run cooler, faster, and more economically and play a key role in conserving energy in a wide array of high-power systems. GeneSiC holds leading patents on wide band-gap power device technologies, a market that is projected to reach more than $5 billion by 2025. Our core strengths of design, process and technology add more value to our customers’ end-product, with performance and cost metrics setting new standards in the silicon carbide industry.

Contact Information

Media

Graham Robertson, CMO Grand Bridges

Graham@GrandBridges.com

Investors

Stephen Oliver, VP Corporate Marketing & Investor Relations

ir@navitassemi.com

Navitas Semiconductor, GaNFast, GaNSense and the Navitas logo are trademarks or registered trademarks of Navitas Semiconductor Limited. All other brands, product names and marks are or may be trademarks or registered trademarks used to identify products or services of their respective owners.

G3R™ 750V SiC MOSFETs Offer Unparalleled Performance and Reliability

750V G3R SiC MOSFET

DULLES, VA, June 04, 2021 — GeneSiC’s next-generation 750V G3R™SiC MOSFETs will deliver unprecedented levels of performance, robustness and quality that exceeds its counterparts. System benefits include low on-state drops at operating temperatures, faster switching speeds, increased power density, minimal ringing (low EMI) and compact system size. GeneSiC’s G3R™, offered in optimized low-inductance discrete packages (SMD and through hole), are optimized to operate with lowest power losses under all operating conditions and ultra-fast switching speeds. These devices have substantially better performance levels as compared to contemporary SiC MOSFETs.

750V G3R SiC MOSFET

“High-efficiency energy usage has become a critical deliverable in next-generation power converters and SiC power devices continue to be the key components driving this revolution. After years of development work towards achieving the lowest on-state resistance and robust short circuit and avalanche performance, we are excited to release the industry’s best performing 750V SiC MOSFETs. Our G3R™ enable power electronics designers to meet the challenging efficiency, power density and quality goals in applications like solar inverters, EV on-board chargers and server/telecom power supplies. An assured quality, supported by fast turn-around and automotive-qualified high volume manufacturing further enhances their value proposition. ” said Dr. Ranbir Singh, President at GeneSiC Semiconductor.

Features –

  • Industry’s lowest gate charge (QG) and internal gate resistance (RG(INT))
  • Lowest RDS(ON) change with temperature
  • Low output capacitance (COSS) and miler capacitance (CGD)
  • 100% avalanche (UIL) tested during production
  • Industry-leading short circuit withstand capability
  • Fast and reliable body diode with low VF and low QRR
  • High and stable gate threshold voltage (VTH) across all temperature and drain-bias conditions
  • Advanced packaging technology for lower thermal resistance and lower ringing
  • Manufacturing uniformity of RDS(ON), VTH and breakdown voltage (BV)
  • Comprehensive product portfolio and safer supply chain with automotive-qualified high volume manufacturing

Applications –

  • Solar (PV) Inverters
  • EV / HEV Onboard Chargers
  • Server & Telecom Power Supplies
  • Uninterruptible Power Supplies (UPS)
  • DC-DC Converters
  • Switched Mode Power Supplies (SMPS)
  • Energy Storage and Battery Charging
  • Induction Heating

All of GeneSiC Semiconductor’s SiC MOSFETs are targeted for automotive applications (AEC-Q101) and PPAP-capable.

G3R60MT07J – 750V 60mΩ TO-263-7 G3R&trade SiC MOSFET

G3R60MT07K – 750V 60mΩ TO-247-4 G3R&trade SiC MOSFET

G3R60MT07D – 750V 60mΩ TO-247-3 G3R&trade SiC MOSFET

For datasheet and other resources, visit – www.genesicsemi.com/sic-mosfet/ or contact sales@genesicsemi.com

All devices are available for purchase through authorized distributors – www.genesicsemi.com/sales-support

Digi-Key Electronics

Newark Farnell element14

Mouser Electronics

Arrow Electronics

About GeneSiC Semiconductor, Inc.

GeneSiC Semiconductor is a pioneer and world leader in Silicon Carbide technology, while also invested in high power Silicon technologies. The global leading manufacturers of industrial and defense systems depend on GeneSiC’s technology to elevate the performance and efficiency of their products. GeneSiC’s electronic components run cooler, faster, and more economically, and play a key role in conserving energy in a wide array of high power systems. We hold leading patents on wide band gap power device technologies; a market that is projected to reach more than $1 billion by 2022. Our core competency is to add more value to our customers’ end product. Our performance and cost metrics are setting standards in the Silicon Carbide industry.

5th Generation 650V SiC Schottky MPS™ Diodes for Best-in-Class Efficiency

Gen5 650V SiC Schottky MPS™

DULLES, VA, May 28, 2021 — GeneSiC Semiconductor, a pioneer and global supplier of Silicon Carbide (SiC) power semiconductor devices, announces the availability of 5th generation (GE*** series) SiC Schottky MPS™ rectifiers that are setting up a new benchmark with their superior price-performance index, industry-leading surge current and avalanche robustness, and high quality manufacturing.

“GeneSiC was one of the first SiC manufacturers to commercially supply SiC Schottky rectifiers in 2011. After more than a decade of supplying high-performance and high-quality SiC rectifiers in the industry, we are excited to release our 5th generation of SiC Schottky MPS™ (Merged-PiN-Schottky) diodes that offer industry-leading performance in all aspects to meet the high efficiency and power density goals in applications like server/telecom power supplies and battery chargers. The revolutionary feature that makes our 5th Generation (GE*** series) SiC Schottky MPS™ diodes stand out among its peers is the low built-in voltage (also known as knee-voltage);it enables lowest diode conduction losses at all load conditions – crucial for applications demanding high-efficiency energy usage. In contrast to other competitor SiC diodes also designed to offer low-knee characteristics, an additional feature of our Gen5 diode designs is that they still maintain that high level of avalanche (UIL) ruggedness that our customers have come to expect from GeneSiC’s Gen3 (GC*** series) and Gen4 (GD*** series) SiC Schottky MPS™” said Dr. Siddarth Sundaresan, Vice President of Technology at GeneSiC Semiconductor.

Features –

  • Low Built-In Voltage – Lowest Conduction Losses for All Load Conditions
  • Superior Figure of Merit – QC x VF
  • Optimal Price Performance
  • Enhanced Surge Current Capability
  • 100% Avalanche (UIL) Tested
  • Low Thermal Resistance for Cooler Operation
  • Zero Forward and Reverse Recovery
  • Temperature Independent Fast Switching
  • Positive Temperature Coefficient of VF

Applications –

  • Boost Diode in Power Factor Correction (PFC)
  • Server and Telecom Power Supplies
  • Solar Inverters
  • Uninterruptible Power Supplies (UPS)
  • Battery Chargers
  • Freewheeling / Anti-parallel Diode in Inverters

GE04MPS06E – 650V 4A TO-252-2 SiC Schottky MPS™

GE06MPS06E – 650V 6A TO-252-2 SiC Schottky MPS™

GE08MPS06E – 650V 8A TO-252-2 SiC Schottky MPS™

GE10MPS06E – 650V 10A TO-252-2 SiC Schottky MPS™

GE04MPS06A – 650V 4A TO-220-2 SiC Schottky MPS™

GE06MPS06A – 650V 6A TO-220-2 SiC Schottky MPS™

GE08MPS06A – 650V 8A TO-220-2 SiC Schottky MPS™

GE10MPS06A – 650V 10A TO-220-2 SiC Schottky MPS™

GE12MPS06A – 650V 12A TO-220-2 SiC Schottky MPS™

GE2X8MPS06D – 650V 2x8A TO-247-3 SiC Schottky MPS™

GE2X10MPS06D – 650V 2x10A TO-247-3 SiC Schottky MPS™

All devices are available for purchase through authorized distributors – www.genesicsemi.com/sales-support

For datasheet and other resources, visit – www.genesicsemi.com/sic-schottky-mps/ or contact sales@genesicsemi.com

About GeneSiC Semiconductor, Inc.

GeneSiC Semiconductor is a pioneer and world leader in Silicon Carbide technology, while also invested in high power Silicon technologies. The global leading manufacturers of industrial and defense systems depend on GeneSiC’s technology to elevate the performance and efficiency of their products. GeneSiC’s electronic components run cooler, faster, and more economically, and play a key role in conserving energy in a wide array of high power systems. We hold leading patents on wide band gap power device technologies; a market that is projected to reach more than $1 billion by 2022. Our core competency is to add more value to our customers’ end product. Our performance and cost metrics are setting standards in the Silicon Carbide industry.

GeneSiC’s New 3rd Generation SiC MOSFETs Featuring the Industry’s Best Figure-of-Merits

DULLES, VA, February 12, 2020 — GeneSiC Semiconductor’s next-generation 1200V G3R™SiC MOSFETs with RDS(ON) levels ranging from 20 mΩ to 350 mΩ deliver unprecedented levels of performance, robustness and quality that exceeds its counterparts. System benefits include higher efficiency, faster switching frequency, increased power density, reduced ringing (EMI) and compact system size.

GeneSiC announces the availability of its industry-leading 3rd generation Silicon Carbide MOSFETs that feature industry-leading performance, robustness and quality to harness never before seen levels of efficiency and system reliability in automotive and industrial applications.

These G3R™ SiC MOSFETs, offered in optimized low-inductance discrete packages (SMD and through hole), are highly optimized for power system designs requiring elevated efficiency levels and ultra-fast switching speeds. These devices have substantially better performance levels as compared to competing products. An assured quality, supported by fast turn-around high volume manufacturing further enhances their value proposition.

“After years of development work towards achieving the lowest on-state resistance and enhanced short circuit performance, we are excited to release the industry’s best performing 1200V SiC MOSFETs with over 15+ discrete and bare chip products. If the next-generation power electronics systems are to meet the challenging efficiency, power density and quality goals in applications like automotive, industrial, renewable energy, transportation, IT and telecom, then they require significantly improved device performance and reliability as compared to presently available SiC MOSFETs” said Dr. Ranbir Singh, President at GeneSiC Semiconductor.

Features –

  • Superior QG x RDS(ON) figure-of-merit – G3R™ SiC MOSFETs feature the industry’s lowest on-state resistance with a very low gate charge, resulting in to 20% better figure-of-merit than any other similar competitor device
  • Low conduction losses at all temperatures – GeneSiC’s MOSFETs feature the softest temperature dependence of on-state resistance to offer very low conduction losses at all temperatures; significantly better than any other trench and planar SiC MOSFETs in the market
  • 100 % avalanche tested – Robust UIL capability is a critical requirement for the majority of field applications. GeneSiC’s 1200V SiC MOSFET discrete are 100 % avalanche (UIL) tested during production
  • Low gate charge and low internal gate resistance – These parameters are critical towards realizing ultra-fast switching and achieving highest efficiencies (low Eon -Eoff) across a wide range of application switching frequencies
  • Normally-off stable operation up to 175°C – All of GeneSiC’s SiC MOSFETs are designed and fabricated with state-of-the-art processes to deliver products that are stable and reliable at all operating conditions without any malfunction risk. The superior gate oxide quality of these devices prevents any threshold (VTH) drift
  • Low device capacitances – G3R™ are designed to drive faster and more efficient with their low device capacitances – Ciss, Coss and Crss
  • Fast and reliable body diode with low intrinsic charge – GeneSiC’s MOSFETs feature benchmark low reverse recovery charge (QRR) at all temperatures; 30% better than any similarly rated competitor device. This offers further reduction in power losses and boosts operating frequencies
  • Ease of use – G3R™ SiC MOSFETs are designed to be driven at +15V / -5V gate drive. This offers broadest compatibility with existing commercial IGBT and SiC MOSFET gate drivers

Applications –

  • Electric Vehicle – Power Train and Charging
  • Solar Inverter and Energy Storage
  • Industrial Motor Drive
  • Uninterruptible Power Supply (UPS)
  • Switched Mode Power Supply (SMPS)
  • Bi-directional DC-DC converters
  • Smart Grid and HVDC
  • Induction Heating and Welding
  • Pulsed Power Application

All devices are available for purchase through authorized distributors – www.genesicsemi.com/sales-support

Digi-Key Electronics

Newark Farnell element14

Mouser Electronics

Arrow Electronics

For datasheet and other resources, visit – www.genesicsemi.com/sic-mosfet or contact sales@genesicsemi.com

All of GeneSiC Semiconductor’s SiC MOSFETs are targeted for automotive applications (AEC-Q101) and PPAP-capable. All devices are offered in industry standard D2PAK, TO-247 and SOT-227 packages.

About GeneSiC Semiconductor, Inc.

GeneSiC Semiconductor is a pioneer and world leader in Silicon Carbide technology, while also invested in high power Silicon technologies. The global leading manufacturers of industrial and defense systems depend on GeneSiC’s technology to elevate the performance and efficiency of their products. GeneSiC’s electronic components run cooler, faster, and more economically, and play a key role in conserving energy in a wide array of high power systems. We hold leading patents on wide band gap power device technologies; a market that is projected to reach more than $1 billion by 2022. Our core competency is to add more value to our customers’ end product. Our performance and cost metrics are setting standards in the Silicon Carbide industry.

GeneSiC’s 3300V and 1700V 1000mΩ SiC MOSFETs Revolutionize the Miniaturization of Auxiliary Power Supplies

DULLES, VA, December 4, 2020 — GeneSiC announces availability of industry-leading 3300V and 1700V discrete SiC MOSFETs that are optimized to achieve unparalleled miniaturization, reliability and energy savings in industrial housekeeping power.

GeneSiC Semiconductor, a pioneer and global supplier of a comprehensive portfolio of Silicon Carbide (SiC) power semiconductors, today announces the immediate availability of next-generation 3300V and 1700V 1000mΩ SiC MOSFETs – G2R1000MT17J, G2R1000MT17D, and G2R1000MT33J. These SiC MOSFETs enable superior performance levels, based on flagship Figures of Merit (FoM) that enhance and simplify power systems across energy storage, renewable energy, industrial motors, general-purpose inverters and industrial lighting. Products released are:

G2R1000MT33J – 3300V 1000mΩ TO-263-7 SiC MOSFET

G2R1000MT17D – 1700V 1000mΩ TO-247-3 SiC MOSFET

G2R1000MT17J – 1700V 1000mΩ TO-263-7 SiC MOSFET

G3R450MT17D – 1700V 450mΩ TO-247-3 SiC MOSFET

G3R450MT17J – 1700V 450mΩ TO-263-7 SiC MOSFET

GeneSiC’s new 3300V and 1700V SiC MOSFETs, available in 1000mΩ and 450mΩ options as SMD and Through-Hole discrete packages, are highly optimized for power system designs requiring elevated efficiency levels and ultra-fast switching speeds. These devices have substantially better performance levels as compared to competing products. An assured quality, supported by fast turn-around high volume manufacturing further enhance their value proposition.

“In applications like 1500V solar inverters, the MOSFET in auxiliary power supply may have to withstand voltages in the range of 2500V, depending on the input voltage, turns ratio of the transformer and the output voltage. High breakdown voltage MOSFETs obviate the need for series connected switches in Flyback, Boost and Forward converters thereby reducing parts-count and reducing circuit complexity. GeneSiC’s 3300V and 1700V discrete SiC MOSFETs allow the designers to use simpler single switch based topology and at the same time provide customers with reliable, compact and cost-effective system” said Sumit Jadav, Senior Applications Manager at GeneSiC Semiconductor.

Features –

  • Superior price-performance index
  • Flagship QG x RDS(ON) figure of merit
  • Low intrinsic capacitance and low gate charge
  • Low losses at all temperatures
  • High avalanche and short circuit ruggedness
  • Benchmark threshold voltage for normally-off stable operation up to 175°C

Applications –

  • Renewable energy (solar inverters) and energy storage
  • Industrial motors (AC servos)
  • General-purpose inverters
  • Industrial lighting
  • Piezo drivers
  • Ion-beam generators

All devices are available for purchase through authorized distributors – www.genesicsemi.com/sales-support

For datasheet and other resources, visit – www.genesicsemi.com/sic-mosfet or contact sales@genesicsemi.com

About GeneSiC Semiconductor, Inc.

GeneSiC Semiconductor is a pioneer and world leader in Silicon Carbide technology, while also invested in high power Silicon technologies. The global leading manufacturers of industrial and defense systems depend on GeneSiC’s technology to elevate the performance and efficiency of their products. GeneSiC’s electronic components run cooler, faster, and more economically, and play a key role in conserving energy in a wide array of high power systems. We hold leading patents on wide band gap power device technologies; a market that is projected to reach more than $1 billion by 2022. Our core competency is to add more value to our customers’ end product. Our performance and cost metrics are setting standards in the Silicon Carbide industry.

GeneSiC’s Industry Leading 6.5kV SiC MOSFETs – the Vanguard for a New Wave of Applications

6.5kV SiC MOSFETs

DULLES, VA, October 20, 2020 — GeneSiC’s releases 6.5kV silicon carbide MOSFETs to lead the forefront in delivering unprecedented levels of performance, efficiency and reliability in medium-voltage power conversion applications such as traction, pulsed power and smart grid infrastructure.

GeneSiC Semiconductor, a pioneer and global supplier of a broad range of Silicon Carbide (SiC) power semiconductors, today announces the immediate availability of 6.5kV SiC MOSFET bare chips – G2R300MT65-CAL and G2R325MS65-CAL. Full SiC modules utilizing this technology are soon to be released. Applications are expected to include traction, pulsed power, smart grid infrastructure and other medium-voltage power converters.

G2R300MT65-CAL – 6.5kV 300mΩ G2R™ SiC MOSFET Bare Chip

G2R325MS65-CAL – 6.5kV 325mΩ G2R™ SiC MOSFET (with Integrated-Schottky) Bare Chip

G2R100MT65-CAL – 6.5kV 100mΩ G2R™ SiC MOSFET Bare Chip

GeneSiC’s innovation features a SiC double-implanted metal oxide semiconductor (DMOSFET) device structure with a junction barrier schottky (JBS) rectifier integrated into the SiC DMOSFET unit cell. This leading-edge power device can be used in a variety of power conversion circuits in the next generation of power conversion systems. Other significant advantages include more efficient bi-directional performance, temperature independent switching, low switching and conduction losses, reduced cooling requirements, superior long-term reliability, ease of paralleling devices and cost benefits. GeneSiC’s technology offers superior performance and also has the potential to reduce the net SiC material footprint in power converters.

“GeneSiC’s 6.5kV SiC MOSFETs are designed and fabricated on 6-inch wafers to realize low on-state resistance, highest quality, and superior price-performance index. This next-generation MOSFETs technology promises exemplar performance, superior ruggedness and long-term reliability in medium-voltage power conversion applications.” said Dr. Siddarth Sundaresan, VP of Technology at GeneSiC Semiconductor.

GeneSiC’s 6.5kV G2R™ SiC MOSFET technology features –

  • High avalanche (UIS) and short circuit ruggedness
  • Superior QG x RDS(ON) figure of merit
  • Temperature independent switching losses
  • Low capacitances and low gate charge
  • Low losses at all temperatures
  • Normally-off stable operation up to 175°C
  • +20 V / -5 V gate drive

For datasheet and other resources, visit – www.genesicsemi.com/sic-mosfet/bare-chip or contact sales@genesicsemi.com

About GeneSiC Semiconductor, Inc.

GeneSiC Semiconductor is a pioneer and world leader in Silicon Carbide technology, while also invested in high power Silicon technologies. The global leading manufacturers of industrial and defense systems depend on GeneSiC’s technology to elevate the performance and efficiency of their products. GeneSiC’s electronic components run cooler, faster, and more economically, and play a key role in conserving energy in a wide array of high power systems. We hold leading patents on wide band gap power device technologies; a market that is projected to reach more than $1 billion by 2022. Our core competency is to add more value to our customers’ end product. Our performance and cost metrics are setting standards in the Silicon Carbide industry.

GeneSiC Interviewed at PCIM 2016 in Nuremberg, Germany

Power System Design Interviews GeneSiC

Nuremberg, Germany May 12, 2016 — GeneSiC Semiconductor’s President was interviewed by Alix Paultre of Power Systems Design (https://www.powersystemsdesign.com/psdcast-ranbir-singh-of-genesic-on-their-latest-silicon-carbide-tech/67) at the PCIM show in Nuremberg, Germany.

 

All-Silicon Carbide Junction Transistors-Diodes offered in a 4 Leaded mini-module

Co-packaged SiC Transistor-Diode combination in a robust, isolated, 4-Leaded, mini-module packaging reduces Turn-On energy losses and enables flexible circuit designs for high frequency power converters

DULLES, VA, May 13, 2015 — GeneSiC Semiconductor, a pioneer and global supplier of a broad range of Silicon Carbide (SiC) power semiconductors today announces the immediate availability of 20 mOhm-1200 V SiC Junction Transistor-Diodes in an isolated, 4-Leaded mini-module packaging that enables extremely low Turn-On energies losses while offering flexible, modular designs in high frequency power converters. The use of high frequency, high voltage and low on-resistance capable SiC Transistors and Rectifiers will reduce the size/weight/volume of electronics applications requiring higher power handling at high operating frequencies. These devices are targeted for use in a wide variety of applications including induction heaters, plasma generators, fast chargers, DC-DC converters, and switched mode power supplies.

Silicon Carbide Junction Transistor Co-pack Rectifier SOT-227 Isotop

1200 V/20 mOhm Silicon Carbide Junction Transistor Rectifier-Copackaged in an Isolated SOT-227 package providing separate Gate Source and Sink capability

Co-packaged SiC Junction Transistors (SJT)-SiC Rectifiers offered by GeneSiC are uniquely applicable to inductive switching applications because SJTs are the only widebandgap switch offers >10 microsec repetitive short circuit capability, even at 80% of the rated voltages (eg. 960 V for a 1200 V device). In addition to the sub-10 nsec rise/falls times and a square reverse biased safe operation area (RBSOA), the Gate Return terminal in the new configuration significantly improves the ability to reduce the switching energies. These new class of products offers transient energy losses and switching times that are independent of junction temperature. SiC Junction Transistors from GeneSiC are gate-oxide free, normally-off, exhibit positive temperature co-efficient of on-resistance, and are capable of being driven at low Gate voltages, unlike other SiC switches.
SiC Schottky Rectifiers used in these mini-modules show low on-state voltage drops, good surge current ratings and industry’s lowest leakage currents at elevated temperatures. With temperature independent, near-zero reverse recovery switching characteristics, SiC Schottky rectifiers are ideal candidates for use in high efficiency circuits.
“GeneSiC’s SiC Transistor and Rectifier products are designed and manufactured to realize low on-state and switching losses. A combination of these technologies in an innovative package promises exemplar performance in power circuits demanding wide bandgap based devices. The mini-module packaging offers great design flexibility for use in a variety of power circuits like H-Bridge, Flyback and multi-level inverters” said Dr. Ranbir Singh, President of GeneSiC Semiconductor.
Product released today include
20 mOhm/1200 V SiC Junction Transistor/Rectifier Co-pack (GA50SICP12-227):
• Isolated SOT-227/mini-block/Isotop package
• Transistor Current Gain (hFE) >100
• Tjmax = 175oC (limited by packaging)
• Turn On/Off; Rise/Fall Times <10 nanoseconds typical.

All devices are 100% tested to full voltage/current ratings. The devices are immediately available from GeneSiC’s Authorized Distributors.

For more information, please visit: https://192.168.88.14/commercial-sic/sic-modules-copack/

About GeneSiC Semiconductor Inc.

GeneSiC Semiconductor Inc. is a leading innovator in high-temperature, high-power and ultra-high-voltage silicon carbide (SiC) devices, and global supplier of a broad range of power semiconductors. Its portfolio of devices includes SiC-based rectifier, transistor, and thyristor products, as well as Silicon diode modules. GeneSiC has developed extensive intellectual property and technical knowledge that encompasses the latest advancements in SiC power devices, with products targeted towards alternative energy, automotive, downhole oil drilling, motor control, power supply, transportation, and uninterruptible power supply applications. In 2011, the company won the prestigious R&D100 award for commercializing ultra-high voltage SiC Thyristors.

General Purpose High Temperature SiC Transistors and Rectifiers Offered at Low Cost

High Temperature (>210oC) Junction Transistors and Rectifiers in small form factor metal can packages offer revolutionary performance benefits to a variety of applications including amplification, low noise circuitry and downhole actuator controls

DULLES, VA, March 9, 2015 — GeneSiC Semiconductor, a pioneer and global supplier of a broad range of Silicon Carbide (SiC) power semiconductors today announces the immediate availability of a line of compact, high temperature SiC Junction Transistors as well as a line of rectifiers in TO-46 metal can packages. These discrete components are designed and manufactured to operate under ambient temperatures of greater than 215oC. The use of high temperature, high voltage and low on-resistance capable SiC Transistors and Rectifiers will reduce the size/weight/volume of electronics applications requiring higher power handling at elevated temperatures. These devices are targeted for use in a wide variety of applications including a wide variety of downhole circuits, geothermal instrumentation, solenoid actuation, general purpose amplification, and switched mode power supplies.

High Temperature SiC Junction Transistors (SJT) offered by GeneSiC exhibit sub-10 nsec rise/falls times enabling >10 MHz switching as well as a square reverse biased safe operation area (RBSOA). The transient energy losses and switching times are independent of junction temperature. These switches are gate-oxide free, normally-off, exhibit positive temperature co-efficient of on-resistance, and are capable of being driven by 0/+5 V TTL gate drivers, unlike other SiC switches. Unique advantages of the SJT in contrast to other SiC switches is its higher long term reliability, >20 usec short circuit capability, and superior avalanche capability. These devices can be used as efficient amplifiers as they promise a much higher linearity than any other SiC switch.

High Temperature SiC Schottky Rectifiers being offered by GeneSiC show low on-state voltage drops, and industry’s lowest leakage currents at elevated temperatures. With temperature independent, near-zero reverse recovery switching characteristics, SiC Schottky rectifiers are ideal candidates for use in high efficiency, high temperature circuits. The TO-46 metal can packages as well as the associated packaging processes used to create these products critically enable long term use where high reliability is critical.

“GeneSiC’s Transistor and Rectifier products are designed and manufactured from the grounds up to enable high temperature operation. These compact TO-46 packaged SJTs offer high current gains (>110), 0/+5 V TTL control, and robust performance. These devices offer low conduction losses and high linearity. We design our “SHT” line of rectifiers, to offer low leakage currents at high temperatures. These metal can packaged products augment our TO-257 and metal SMD products released last year to offer small form factor, vibration resistant solutions” said Dr. Ranbir Singh, President of GeneSiC Semiconductor.

Products released today include:TO-46 SiC Transistor Diodes

240 mOhm SiC Junction Transistors:

  • 300 V blocking voltage. Part number GA05JT03-46
  • 100 V blocking voltage. Part number GA05JT01-46
  • Current Gain (hFE) >110
  • Tjmax = 210oC
  • Turn On/Off; Rise/Fall Times <10 nanoseconds typical.

Up to 4 Ampere High Temperature Schottky diodes:

  • 600 V blocking voltage. Part number GB02SHT06-46
  • 300 V blocking voltage. Part number GB02SHT03-46
  • 100 V blocking voltage. Part number GB02SHT01-46
  • Total capacitive charge 9 nC
  • Tjmax = 210oC.

All devices are 100% tested to full voltage/current ratings and housed in metal can TO-46 packages. The devices are immediately available from GeneSiC’s Authorized Distributors.

About GeneSiC Semiconductor Inc.

GeneSiC Semiconductor Inc. is a leading innovator in high-temperature, high-power and ultra-high-voltage silicon carbide (SiC) devices, and global supplier of a broad range of power semiconductors. Its portfolio of devices includes SiC-based rectifier, transistor, and thyristor products, as well as Silicon diode modules. GeneSiC has developed extensive intellectual property and technical knowledge that encompasses the latest advancements in SiC power devices, with products targeted towards alternative energy, automotive, downhole oil drilling, motor control, power supply, transportation, and uninterruptible power supply applications. In 2011, the company won the prestigious R&D100 award for commercializing ultra-high voltage SiC Thyristors.

For more information, please visit https://192.168.88.14/high-temperature-sic/high-temperature-sic-schottky-rectifiers/; and https://192.168.88.14/high-temperature-sic/high-temperature-sic-junction-transistors/.

Gate Driver Board and SPICE Models for Silicon Carbide Junction Transistors (SJT) Released

Gate Driver Board optimized for high switching speeds and behavior-based models enable power electronic design engineers to verify and quantify benefits of SJTs in board-level evaluation and circuit simulation

DULLES, V.A., Nov 19, 2014 — GeneSiC Semiconductor, a pioneer and global supplier of a broad range of Silicon Carbide (SiC) power semiconductors today announces the immediate availability of Gate Driver evaluation board and has expanded its design support for the industry’s lowest loss switches – the SiC Junction Transistor (SJT) – with a fully-qualified LTSPICE IV model. Using the new Gate Driver Board, power conversion circuit designers can verify the benefits of sub-15 nanosecond, temperature independent switching characteristics of SiC Junction Transistors, with low driver power losses. Incorporating the new SPICE models, circuit designers can easily evaluate the benefits GeneSiC’s SJTs provide for achieving a higher level of efficiency than is possible with conventional silicon power switching devices for comparably-rated devices.

GA03IDDJT30-FR4_image

Gate Driver Board GA03IDDJT30-FR4 applicable towards SJTs from GeneSiC

SiC Junction Transistors have significantly different characteristics than other SiC Transistor technologies, as well as Silicon Transistors. Gate Driver boards that can provide low power losses while still offering high switching speeds were needed to provide drive solutions for utilizing the benefits of SiC Junction Transistors. GeneSiC’s fully isolated GA03IDDJT30-FR4 Gate driver board takes in 0/12V and a TTL signal to optimally condition the voltage/current waveforms required to provide small rise/fall times, while still minimizing the continuous current requirement for keeping the Normally-OFF SJT conducting during the on-state. The pin configuration and form factors are kept similar to other SiC transistors. GeneSiC has also released Gerber files and BOMs to end-user to enable them to incorporate the benefits of the driver design innovations realized.

SJTs offer well-behaved on-state and switching characteristics, making it easy to create behavior based SPICE models that agree remarkably well with the underlying physics based models as well. Using well-established and understood physics-based models, SPICE parameters were released after extensive testing with device behavior. GeneSiC’s SPICE models are compared to the experimentally measured data on all device datasheets and are applicable to all 1200 V and 1700 V SiC Junction Transistors released.
GeneSiC’s SJTs are capable of delivering switching frequencies that are more than 15 times higher than IGBT-based solutions. Their higher switching frequencies can enable smaller magnetic and capacitive elements, thereby shrinking the overall size, weight and cost of power electronics systems.

This SiC Junction Transistor SPICE model adds to GeneSiC’s comprehensive suite of design support tools, technical documentation, and reliability information to provide power electronics engineers with the design resources necessary to implement GeneSiC’s comprehensive family of SiC Junction Transistors and Rectifiers into the next generation of power systems.

GeneSiC’s Gate Driver Board datasheets and SJT SPICE models can be downloaded from https://192.168.88.14/commercial-sic/sic-junction-transistors/